HETEROGENEOUSLY INTEGRATED PHOTONIC PLATFORM WITH InGaP LAYERS

Abstract

A heterogenous device includes a passive waveguide structure and an active waveguide structure. The passive waveguide structure is attached to a substrate and includes a dielectric layer. The active waveguide structure is attached to a top surface of the passive waveguide structure and includes a quantum well layer overlying an InGaP layer. The InGaP layer provides n-contact functionality. A heterogenous device includes a passive waveguide structure and an active waveguide structure. The passive waveguide structure is attached to a substrate and includes a semiconductor layer. The active waveguide structure is attached to a top surface of the passive waveguide structure and includes a quantum well layer overlying an InGaP layer. The InGaP layer provides n-contact functionality.

Dependencies are inferred from the claim text.