Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

An optoelectronic semiconductor chip comprising:

• an epitaxial semiconductor layer stack having an active zone configured to generate electromagnetic radiation in operation,
• a side surface,
• wherein
• an aluminum content of the epitaxial semiconductor layer stack is increased at the side surface so that a band gap of the active zone is increased at the side surface of the epitaxial semiconductor layer stack, and
• a spacer layer is arranged between the aluminum-containing layer and the side surface.

A method of manufacturing an optoelectronic semiconductor chip comprising:

• providing an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation in operation;
• structuring the epitaxial semiconductor layer sequence so that at least one side surface is formed in the epitaxial semiconductor layer sequence;
• and
• introducing aluminum atoms and/or aluminum ions at the side surface into the epitaxial semiconductor layer sequence so that a band gap of the active zone at the side surface is increased, wherein
• introducing the aluminum atoms and/or the aluminum ions into the epitaxial semiconductor layer sequence comprises,
• applying an aluminum-containing layer, and
• operating the edge-emitting laser diode chip so that aluminum atoms and/or aluminum ions from the aluminum-containing layer diffuse into the epitaxial semiconductor layer sequence.