Surface emitting laser apparatus and method for manufacturing the same
AssigneeHlj Technology Co., Ltd.
InventorsLi-Hung Lai, Li-Wen Lai
Life of this patent
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Abstract
A surface emitting laser apparatus and a method for manufacturing the same are provided. The surface emitting laser apparatus includes a first reflector layer, an active light-emitting layer, a second reflector layer, and a current confinement structure. The active light-emitting layer is disposed between the first reflector layer and the second reflector layer, so as to produce a laser beam. The current confinement structure has one P-N junction or one PIN junction.
Claims7
A surface emitting laser apparatus, comprising:
- a first reflector layer;
- an active light-emitting layer;
- a second reflector layer, wherein the active light-emitting layer is disposed between the first reflector layer and the second reflector layer, so as to produce a laser beam;
- and
- a current confinement structure having one PIN junction;
- wherein the current confinement structure includes a first conductive doped layer, a second conductive doped layer, and an intrinsic semiconductor layer, and the intrinsic semiconductor layer is arranged between the first conductive doped layer and the second conductive doped layer to form the PIN junction;
- wherein the second conductive doped layer and the second reflector layer have different conductivity types, and the first conductive doped layer of the current confinement structure is configured to face the first reflector layer;
- and
- wherein the current confinement structure is disposed in the second reflector layer and is in direct contact with the active light-emitting layer, the current confinement structure has a confinement hole, and a part of the second reflector layer is filled into the confinement hole and connected to the active light-emitting layer.
A surface emitting laser apparatus, comprising:
- a first reflector layer;
- a second reflector layer;
- an active light-emitting layer, is disposed between the first reflector layer and the second reflector layer, so as to produce a laser beam;
- and
- a current confinement structure including a Zener diode;
- wherein the current confinement structure is disposed in the second reflector layer and is in direct contact with the active light-emitting layer, the current confinement structure has a confinement hole, and a part of the second reflector layer is filled into the confinement hole and connected to the active light-emitting layer, and
- wherein the current confinement structure includes a first conductive doped layer and a second conductive doped layer, so as to form the Zener diode;
- wherein the second conductive doped layer and the second reflector layer have different conductivity types, and the first conductive doped layer of the current confinement structure is configured to face the first reflector layer.
A method for manufacturing a surface emitting laser apparatus, comprising:
- forming a first reflector layer;
- forming an active light-emitting layer on the first reflector layer;
- forming a current confinement structure, wherein the current confinement structure defines a confinement hole and has a PIN junction;
- and
- forming a second reflector layer;
- wherein the step of forming the current confinement structure includes:
- forming a first conductive doped layer, wherein the first conductive doped layer and the first reflector layer have different conductivity types;
- forming a second conductive doped layer, wherein a stacked structure is jointly formed by the first conductive doped layer and the second conductive doped layer;
- and
- forming the confinement hole in the stacked structure;
- wherein the current confinement structure is disposed in the second reflector layer and is in direct contact with the active light-emitting layer, and a part of the second reflector layer is filled into the confinement hole and connected to the active light-emitting layer.
Dependencies are inferred from the claim text.