Hcg tunable vcsel with fully oxidized bottom dbr (gaas based vcsel)

Abstract

A light emitting apparatus includes a VCSEL system with a tunable VCSEL laser having a first mirror; one or more active regions with a first active region adjacent to the first mirror, each of an active region including quantum wells and barriers, each of an active region surrounded by one or more p-n junctions, the one or more active regions including a selected shape structure each with a tunnel junction (TJ) of a plurality of TJ's; one or more apertures provided with the selected shape structure; one or more buried tunnel junctions (BTJ), additional TJ's, planar structures and a plurality of additional BTJ's are created during a regrowth process that is independent of a first growth process of the first mirror, the active region and the one or more TJs; one or more oxide layers and an epitaxial growth of an AlGaAs; one or more electrical confinement apertures defined by the one or more BTJ's, additional TJ's, planar structures and additional BTJ; a vertical resonator cavity disposed over the electrical confinement aperture; a high contrast grating (HCG) operating as a second mirror positioned over the vertical resonator cavity, the HCG configured to reflect a first portion of light back into the vertical resonator cavity, and a second portion of the light as an output beam from the tunable VCSEL laser, the HCG structure being layered on the selected shape structure. A shape of the output beam of the tunable VCSEL laser is determined by a geometric shape of the one or more BTJ apertures, apertures for additional TJ's, planar structures and additional BTJ's, with a transmission function of the HCG and is designed according to the desired optical transmission function of the application. A DBR is on one side of the junctions, and an HCG grading on the other side of the junctions. The VCSEL has a final thickness of an oxide layer different than the epitaxial growth of the AlGaAs.

Dependencies are inferred from the claim text.