H01J 2237/31783
M-i-m cathode
Official title: M-I-M cathode
H01J2237/31783 (M-i-m cathode) appears on 4 US grants and 2 published applications in this corpus.
Search patents in H01J- Granted patents
- 4
- Published applications
- 2
- Assignees
- 3
- Inventors
- 8
- Latest grant
- 15 Aug 2006
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 1 | 1 |
| 2006 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Manufacturing method for emitter for electron-beam projection lithography15 Aug 2006US 7,091,054 B2Samsung Electronics Co., Ltd.
- Emitter for electron-beam projection lithography system and manufacturing method thereof11 Oct 2005US 6,953,946 B2Samsung Electronics Co., Ltd.
- Thin-film electron emitter device having a multi-layer top electrode for suppressing degradation of an insulating layer and application apparatus using the same10 Aug 1999US 5,936,257 AHitachi, Ltd.
- Tunnel cathode mask for electron lithography and method for manufacturing and operating it22 Jul 1986US 4,601,971 ASiemens Aktiengesellschaft
Most cited
By later US patents
- Thin-film electron emitter device having a multi-layer top electrode for suppressing degradation of an insulating layer and application apparatus using the same31US 5,936,257 AHitachi, Ltd. · 1999
- Tunnel cathode mask for electron lithography and method for manufacturing and operating it2US 4,601,971 ASiemens Aktiengesellschaft · 1986
- Emitter for electron-beam projection lithography system and manufacturing method thereof1US 6,953,946 B2Samsung Electronics Co., Ltd. · 2005