H01J 2201/319
Circuit elements associated with the emitters by direct integration
H01J2201/319 (Circuit elements associated with the emitters by direct integration) appears on 311 US grants and 83 published applications in this corpus.
Search patents in H01J- Granted patents
- 311
- Published applications
- 83
- Assignees
- 79
- Inventors
- 384
- Latest grant
- 26 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 4 | 0 |
| 1992 | 7 | 0 |
| 1993 | 6 | 0 |
| 1994 | 10 | 0 |
| 1995 | 15 | 0 |
| 1996 | 44 | 0 |
| 1997 | 29 | 0 |
| 1998 | 45 | 0 |
| 1999 | 22 | 0 |
| 2000 | 29 | 0 |
| 2001 | 9 | 4 |
| 2002 | 15 | 15 |
| 2003 | 15 | 6 |
| 2004 | 12 | 10 |
| 2005 | 7 | 6 |
| 2006 | 7 | 4 |
| 2007 | 6 | 7 |
| 2008 | 2 | 6 |
| 2009 | 3 | 6 |
| 2010 | 5 | 5 |
| 2011 | 2 | 1 |
| 2012 | 3 | 1 |
| 2013 | 2 | 1 |
| 2014 | 1 | 3 |
| 2015 | 1 | 0 |
| 2016 | 1 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 1 |
| 2021 | 1 | 1 |
| 2022 | 0 | 2 |
| 2023 | 2 | 0 |
| 2024 | 1 | 2 |
| 2025 | 0 | 0 |
| 2026 | 1 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Systems and methods for fabricating silicon die stacks for electron emitter array chips26 May 2026US 12,640,326 B2
- Systems and methods for fabricating silicon die stacks for electron emitter array chips2 Jul 2024US 12,027,489 B2
- Vacuum channel transistor structures with sub-10 nanometer nanogaps and layered metal electrodes16 May 2023US 11,651,925 B2International Business Machines Corporation
- Electron emitting element10 Jan 2023US 11,551,902 B2Sharp Kabushiki Kaisha
- Vacuum channel transistor structures with sub-10 nanometer nanogaps and layered metal electrodes2 Mar 2021US 10,937,620 B2International Business Machines Corporation
- Field emission device having automatic current limiter10 Sep 2026US 2026/0269165 A1LG Electronics Inc.
- Backend field emission devices19 Mar 2026US 2026/0081089 A1
- Systems and methods for fabricating silicon die stacks for electron emitter array chips7 Nov 2024US 2024/0371819 A1
- Systems and methods for fabricating silicon die stacks for electron emitter array chips8 Feb 2024US 2024/0047415 A1
- Electron source for generating an electron beam22 Dec 2022US 2022/0406556 A1Friedrich-Alexander-Universität Erlangen-Nürnberg
Most cited
By later US patents
- Electron source with micropoint emissive cathodes and display means by cathodoluminescence excited by field emission using said source400US 4,940,916 ACommissariat A L' Energie Atomique · 1990
- Vertical microelectronic field emission devices312US 5,475,280 AMcnc · 1995
- Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same295US 6,445,006 B1Advanced Technology Materials, Inc. · 2002
- Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology285US 5,229,331 AMicron Technology, Inc. · 1993
- Carbon fiber-based field emission devices189US 5,973,444 AAdvanced Technology Materials, Inc. · 1999