Vacuum channel transistor structures with sub-10 nanometer nanogaps and layered metal electrodes
AssigneeInternational Business Machines Corporation
InventorsJoshua T. Smith, Benjamin Wunsch
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Abstract
A technique relates to a semiconductor device. An emitter electrode and a collector electrode are formed in a dielectric layer such that a nanogap separates the emitter electrode and the collector electrode, a portion of the emitter electrode including layers. A channel is formed in the dielectric layer so as to traverse the nanogap. A top layer is formed over the channel so as to cover the channel and the nanogap without filling in the channel and the nanogap, thereby forming a vacuum channel transistor structure.
Claims20
A semiconductor device comprising:
- an emitter electrode and a collector electrode formed in a dielectric layer such that a nanogap separates the emitter electrode and the collector electrode, a portion of the emitter electrode comprising layers;
- a channel formed in the dielectric layer so as to traverse the nanogap;
- and
- a top layer over the channel so as to cover the channel and the nanogap without filling in the channel and the nanogap, thereby forming a vacuum channel transistor structure, wherein vent holes are above the channel and adjacent to the nanogap.
A semiconductor device comprising:
- an emitter electrode and a collector electrode formed in a dielectric layer such that a nanogap separates the emitter electrode and the collector electrode, a portion of the emitter electrode comprising layers;
- a channel formed in the dielectric layer so as to traverse the nanogap;
- and
- a top layer over the channel so as to cover the channel and the nanogap without filling in the channel and the nanogap, thereby forming a vacuum channel transistor structure, wherein vent holes are formed in the top layer.
A semiconductor device comprising:
- an emitter electrode and a collector electrode formed in a dielectric layer such that a nanogap separates the emitter electrode and the collector electrode, a portion of the emitter electrode comprising layers of low workfunction material and high workfunction material, the emitter electrode comprising one or more elongated emitter tips, the collector electrode comprising one or more elongated collector tips;
- a channel formed in the dielectric layer so as to traverse the nanogap;
- a top layer over the channel so as to cover the channel and the nanogap without filling in the channel and the nanogap;
- one or more vent holes formed in the top layer so as to communicate with the channel;
- and
- a cover material sealing the one or more vent holes.
Dependencies are inferred from the claim text.