Vacuum channel transistor structures with sub-10 nanometer nanogaps and layered metal electrodes
AssigneeInternational Business Machines Corporation
InventorsJoshua T. Smith, Benjamin Wunsch
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Abstract
A technique relates to a semiconductor device. An emitter electrode and a collector electrode are formed in a dielectric layer such that a nanogap separates the emitter electrode and the collector electrode, a portion of the emitter electrode including layers. A channel is formed in the dielectric layer so as to traverse the nanogap. A top layer is formed over the channel so as to cover the channel and the nanogap without filling in the channel and the nanogap, thereby forming a vacuum channel transistor structure.
Claims13
A method of forming a semiconductor device, the method comprising:
- forming an emitter electrode and a collector electrode in a dielectric layer such that a nanogap separates the emitter electrode and the collector electrode, a portion of the emitter electrode comprising layers;
- forming a channel in the dielectric layer so as to traverse the nanogap;
- and
- forming a top layer over the channel so as to cover the channel and the nanogap without filling in the channel and the nanogap, thereby forming a vacuum channel transistor structure;
- wherein the top layer comprises one or more coverable vent holes, the one or more coverable vent holes being over the channel.
A method of forming a semiconductor device, the method comprising:
- forming an emitter electrode and a collector electrode in a dielectric layer such that a nanogap separates the emitter electrode and the collector electrode, a portion of the emitter electrode comprising layers;
- forming a channel in the dielectric layer so as to traverse the nanogap;
- and
- forming a top layer over the channel so as to cover the channel and the nanogap without filling in the channel and the nanogap, thereby forming a vacuum channel transistor structure, wherein sacrificial material is formed in the channel as a place holder, prior to forming the top layer, and wherein vent holes are formed in the top layer providing access to the sacrificial material.
Dependencies are inferred from the claim text.