G11C 2213/13
Dissociation, i.e. using memory material including molecules which, during a write operation
Official title: Dissociation, i.e. using memory material including molecules which, during a write operation, are dissociated in ions which migrate further in the memory material
G11C2213/13 (Dissociation, i.e. using memory material including molecules which, during a write operation) appears on 34 US grants and 34 published applications in this corpus.
Search patents in G11C- Granted patents
- 34
- Published applications
- 34
- Assignees
- 19
- Inventors
- 34
- Latest grant
- 3 Sep 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 5 |
| 2003 | 1 | 0 |
| 2004 | 2 | 0 |
| 2005 | 2 | 2 |
| 2006 | 2 | 0 |
| 2007 | 2 | 0 |
| 2008 | 0 | 2 |
| 2009 | 0 | 2 |
| 2010 | 4 | 1 |
| 2011 | 1 | 3 |
| 2012 | 2 | 0 |
| 2013 | 1 | 0 |
| 2014 | 0 | 0 |
| 2015 | 1 | 1 |
| 2016 | 0 | 1 |
| 2017 | 0 | 0 |
| 2018 | 0 | 1 |
| 2019 | 3 | 9 |
| 2020 | 9 | 3 |
| 2021 | 3 | 3 |
| 2022 | 0 | 1 |
| 2023 | 0 | 0 |
| 2024 | 1 | 0 |
By publication year.
Recent patents
- Memory cells with asymmetrical electrode interfaces3 Sep 2024US 12,082,513 B2Micron Technology, Inc.
- Memory cells with asymmetrical electrode interfaces28 Sep 2021US 11,133,463 B2Micron Technology, Inc.
- Resistive memory device having a template layer22 Jun 2021US 11,043,633 B24Ds Memory, Limited
- Switching resistor and method of making such a device11 May 2021US 11,004,506 B2UCL Business PLC
- Resistive memory device having a template layer8 Dec 2020US 10,862,028 B24Ds Memory, Limited
- Memory cells with asymmetrical electrode interfaces24 Feb 2022US 2022/0059763 A1Micron Technology, Inc.
- Resistive memory device having a conductive barrier layer18 Feb 2021US 2021/0050516 A14D-S, Ltd.
- Resistive memory device having a template layer4 Feb 2021US 2021/0036219 A1
- Resistive memory device having a template layer4 Feb 2021US 2021/0036220 A14Ds Memory, Limited
- Memory cells with asymmetrical electrode interfaces8 Oct 2020US 2020/0321522 A1Micron Technology, Inc.
Most cited
By later US patents
- Molecular memory device51US 6,781,868 B2Advanced Micro Devices, Inc. · 2004
- Addressable and electrically reversible memory switch28US 6,809,955 B2Advanced Micro Devices, Inc. · 2004
- Reversible field-programmable electric interconnects20US 6,844,608 B2Advanced Micro Devices, Inc. · 2005
- Electrochemical memory device15US 7,652,907 B2Commissariat A L' Energie Atomique · 2010
- Floating gate memory device using composite molecular material14US 6,627,944 B2Advanced Micro Devices, Inc. · 2003