Memory cells with asymmetrical electrode interfaces
AssigneeMicron Technology, Inc.
InventorsAgostino Pirovano, Kolya Yastrebenetsky, Anna Maria Conti, Fabio Pellizzer
Life of this patent
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Abstract
Methods, systems, and devices for memory cells with asymmetrical electrode interfaces are described. A memory cell with asymmetrical electrode interfaces may mitigate shorts in adjacent word lines, which may be leveraged for accurately reading a stored value of the memory cell. The memory device may include a self-selecting memory component with a top surface area in contact with a top electrode and a bottom surface area in contact with a bottom electrode, where the top surface area in contact with the top electrode is a different size than the bottom surface area in contact with the bottom electrode.
Claims20
A memory device, comprising:
- a self-selecting memory component;
- a top electrode in physical contact with a digit line and comprising a first interface with the self-selecting memory component having a first contact area;
- and
- a bottom electrode in physical contact with a word line and comprising a second interface with the self-selecting memory component having a second contact area that is less than the first contact area of the first interface.
An apparatus, comprising:
- a substrate;
- and
- a memory cell stack over the substrate, the memory cell stack comprising:
- a self-selecting memory component;
- a top electrode in physical contact with a digit line and comprising a first interface with the self-selecting memory component having a first contact area;
- and
- a bottom electrode in physical contact with a word line and comprising a second interface with the self-selecting memory component having a second contact area that is less than the first contact area of the first interface.
An apparatus, comprising:
- a self-selecting memory component;
- a top electrode in physical contact with a digit line and comprising a bottom surface in physical contact with a top surface of the self-selecting memory component, wherein the bottom surface of the top electrode and the top surface of the self-selecting memory component have a first length in a first direction;
- and
- a bottom electrode in physical contact with a word line and comprising a top surface in physical contact with a bottom surface of the self-selecting memory component, wherein the top surface of the bottom electrode has a second length in the first direction that is less than the first length.
Dependencies are inferred from the claim text.