Switching resistor and method of making such a device
AssigneeUCL Business PLC
InventorsAnthony Kenyon, Adnan Mehonic, Wing Ng
Life of this patent
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Abstract
A switching resistor has a low resistance state and a high resistance state. The switching resistor comprises a dielectric layer disposed between a first electrode and a second electrode. The switching resistor further comprises a textured boundary surface between the first electrode and the dielectric layer. The textured boundary surface promotes the formation of a conductive pathway in the dielectric layer between the first electrode and the second electrode.
Claims20
A switching resistor having a low resistance state and a high resistance state, comprising a dielectric layer disposed between a first electrode and a second electrode, wherein the dielectric layer is an oxide of silicon, and a textured boundary surface between the first electrode and the dielectric layer, wherein the dielectric layer includes column structures extending from the textured boundary surface between the first electrode and the dielectric layer towards the second electrode, wherein the textured boundary surface is configured to promote the formation of a conductive pathway in the dielectric layer, at an edge of a column structure, between the first electrode and the second electrode for intrinsic resistance switching.
A method of making a switching resistor having a low resistance state and a high resistance state, the method comprising:
- forming a first electrode;
- forming a dielectric layer on the first electrode, with a textured boundary surface between the first electrode and the dielectric layer, wherein the dielectric layer is an oxide of silicon;
- and
- forming a second electrode on the dielectric layer, and wherein the dielectric layer includes column structures extending from the textured boundary surface between the first electrode and the dielectric layer towards the second electrode;
- wherein the textured boundary surface is configured to promote the formation of a conductive pathway in the dielectric layer, at an edge of a column structure, between the first electrode and the second electrode providing intrinsic resistance switching.
Dependencies are inferred from the claim text.