G11C 2211/5641
Multilevel memory having cells with different number of storage levels
G11C2211/5641 (Multilevel memory having cells with different number of storage levels) appears on 1,341 US grants and 1,385 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,341
- Published applications
- 1,385
- Assignees
- 187
- Inventors
- 1,632
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 5 | 0 |
| 1997 | 3 | 0 |
| 1998 | 13 | 0 |
| 1999 | 11 | 0 |
| 2000 | 20 | 0 |
| 2001 | 9 | 3 |
| 2002 | 18 | 12 |
| 2003 | 7 | 20 |
| 2004 | 20 | 23 |
| 2005 | 17 | 25 |
| 2006 | 13 | 22 |
| 2007 | 20 | 47 |
| 2008 | 31 | 74 |
| 2009 | 37 | 71 |
| 2010 | 46 | 75 |
| 2011 | 72 | 55 |
| 2012 | 79 | 72 |
| 2013 | 66 | 65 |
| 2014 | 71 | 73 |
| 2015 | 84 | 69 |
| 2016 | 70 | 55 |
| 2017 | 59 | 45 |
| 2018 | 62 | 54 |
| 2019 | 66 | 96 |
| 2020 | 71 | 77 |
| 2021 | 88 | 74 |
| 2022 | 69 | 85 |
| 2023 | 81 | 67 |
| 2024 | 78 | 63 |
| 2025 | 37 | 42 |
| 2026 | 17 | 21 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Lifetime mixed level non-volatile memory system8 Sep 2026US 12,731,638 B2Vervain, LLC
- Data compression25 Aug 2026US 12,717,475 B2Samsung Electronics Co., Ltd.
- Flash memory for reducing reliability degradation of OS data due to SMT process and method for operating the same25 Aug 2026US 12,717,494 B2Samsung Electronics Co., Ltd.
- NAND die with wire-bond inductive compensation for altered bond wire bandwidth in memory devices25 Aug 2026US 12,718,878 B2SanDisk Technologies LLC
- Storage device for determining memory cell type after data input during program operation and operating method thereof11 Aug 2026US 12,706,151 B2SK hynix Inc.
- Memory system and information processing system27 Aug 2026US 2026/0252249 A1Kioxia Corporation
- Memory sub-system for memory cell in-field touch-up13 Aug 2026US 2026/0236178 A1Micron Technology, Inc.
- Memory device, method of operating thereof, and memory system13 Aug 2026US 2026/0237441 A1Yangtze Memory Technologies Co., Ltd.
- Nonvolatile memory system and operating method thereof30 Jul 2026US 2026/0221189 A1SK hynix Inc.
- Managing program operations in memory systems30 Jul 2026US 2026/0221193 A1Yangtze Memory Technologies Co., Ltd.
Most cited
By later US patents
- Multi-state EEPROM having write-verify control circuit972US 5,570,315 AKabushiki Kaisha Toshiba · 1996
- Semiconductor device and memory system940US 6,046,935 AKabushiki Kaisha Toshiba · 2000
- Selective operation of a multi-state non-volatile memory system in a binary mode707US 6,456,528 B1SanDisk Corporation · 2002
- Multi-state non-volatile flash memory capable of being its own two state write cache505US 5,930,167 ASanDisk Corporation · 1999
- Semiconductor device and memory system454US 5,903,495 AKabushiki Kaisha Toshiba · 1999