Memory sub-system for memory cell in-field touch-up
AssigneeMicron Technology, Inc.
InventorsHuai-Yuan Tseng, Pitamber Shukla, Akira Goda
Life of this patent
Estimating the term…
Abstract
An apparatus can include a touch-up component. The touch-up component can detect a first charge parameter for a portion of memory of a memory system. The touch-up component can, subsequent to detecting the first charge parameter a particular time interval, detect a second charge parameter for the portion of memory. The touch-up component can determine a charge parameter change per time interval based on the first charge parameter, the second charge parameter, and the particular time interval. The touch-up component can perform a touch-up operation on the portion of memory at a particular time point based on the charge parameter change per time interval.
Claims20
An apparatus, comprising:
- a memory device comprising a plurality of pages of memory;
- and
- a controller coupled to the memory device and configured to:
- determine a charge parameter change per time interval for a target page of memory of the plurality of pages of memory;
- perform a touch-up operation on the target page of memory at a particular time point based on the charge parameter change per time interval;
- perform a copyback read on the target page of memory in association with the touch-up operation by transferring data to a cache register, wherein the copyback read is performed at the particular time point based on the charge parameter change per time interval;
- and
- perform a copyback program of the data included in the copyback read and stored in the cache register to the target page of memory, wherein the copyback read and the copyback program are performed in response to a distance between voltage distributions for the target page being less than a threshold distance.
A method, comprising:
- determining a charge parameter change per time interval for a first portion of memory and a second portion of memory;
- performing a touch-up operation on each of the first and the second portions of memory at different time points based on their respective charge parameter change per time intervals;
- performing a copyback read on the first and the second portions of memory in association with the touch-up operation by transferring data to a cache register, wherein the copyback read is performed at the different time points based on the respective charge parameter change per time intervals;
- and
- performing a copyback program of the data included in the copyback read and stored in the cache register to the first and the second portions of memory, wherein the copyback read and the copyback program are performed in response to a distance between voltage distributions for the first and the second portions of memory being less than a threshold distance.
An apparatus, comprising:
- a memory device comprising a first portion of memory of a plurality of portions of memory and a second portion of memory of the plurality of portions of memory;
- and
- a processing device coupled to the memory device, wherein the processing device is configured to:
- determine a charge parameter change per time interval for each of the first and second portions of memory;
- determine a touch-up trimset for each of the first and the second portions of memory based on their respective charge parameter changes per time interval;
- apply the determined touch-up trimset to each of the first and the second portions of memory;
- perform a copyback read on the first and the second portions of memory in association with the application of the determined touch-up trimset by transferring data to a cache register, wherein the copyback read is performed at a particular time interval based on the charge parameter change per time intervals;
- and
- perform a copyback program of the data included in the copyback read and stored in the cache register to the first and the second portions of memory, wherein the copyback read and the copyback program are performed in response to a distance between voltage distributions for the first and the second portions of memory being less than a threshold distance.
Dependencies are inferred from the claim text.