G11C 2207/068
Integrator type sense amplifier
G11C2207/068 (Integrator type sense amplifier) appears on 39 US grants and 37 published applications in this corpus.
Search patents in G11C- Granted patents
- 39
- Published applications
- 37
- Assignees
- 26
- Inventors
- 52
- Latest grant
- 17 Jun 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2003 | 1 | 2 |
| 2004 | 2 | 2 |
| 2005 | 3 | 4 |
| 2006 | 2 | 2 |
| 2007 | 1 | 0 |
| 2008 | 1 | 1 |
| 2009 | 1 | 3 |
| 2010 | 0 | 0 |
| 2011 | 2 | 1 |
| 2012 | 3 | 0 |
| 2013 | 0 | 0 |
| 2014 | 1 | 1 |
| 2015 | 1 | 0 |
| 2016 | 2 | 3 |
| 2017 | 4 | 3 |
| 2018 | 1 | 2 |
| 2019 | 3 | 2 |
| 2020 | 4 | 4 |
| 2021 | 3 | 2 |
| 2022 | 1 | 1 |
| 2023 | 1 | 2 |
| 2024 | 1 | 1 |
| 2025 | 1 | 0 |
| 2026 | 0 | 1 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Ferroelectric memory circuit and reading method thereof17 Jun 2025US 12,334,128 B2Ferroelectric Memory GmbH
- Memory device and method26 Mar 2024US 11,942,185 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Anti-fuse memory cell state detection circuit and memory26 Dec 2023US 11,854,633 B2Changxin Memory Technologies, Inc.
- Event counters for memory operations17 May 2022US 11,335,408 B2Micron Technology, Inc.
- Multi-stage memory sensing5 Oct 2021US 11,134,788 B2Micron Technology, Inc.
- Reconfigurable analog current-domain in-memory compute sram design for low-power applications5 Mar 2026US 2026/0065981 A1International Business Machines Corporation
- Memory device and method11 Jul 2024US 2024/0233792 A1
- Memory device and method25 May 2023US 2023/0162769 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ferroelectric memory circuit and reading method thereof9 Feb 2023US 2023/0041759 A1Ferroelectric Memory GmbH
- Anti-fuse memory cell state detection circuit and memory20 Jan 2022US 2022/0020443 A1Changxin Memory Technologies, Inc.
Most cited
By later US patents
- Noise resistant small signal sensing circuit for a memory device64US 6,798,705 B2Micron Technology, Inc. · 2004
- Noise resistant small signal sensing circuit for a memory device50US 7,095,667 B2Micron Technology, Inc. · 2006
- Noise resistant small signal sensing circuit for a memory device47US 6,826,102 B2Micron Technology, Inc. · 2004
- Noise resistant small signal sensing circuit for a memory device46US 6,954,391 B2Micron Technology, Inc. · 2005
- Noise resistant small signal sensing circuit for a memory device45US 6,856,564 B2Micron Technology, Inc. · 2005