G11C 16/225
Preventing erasure, programming or reading when power supply voltages are outside the
Official title: {Preventing erasure, programming or reading when power supply voltages are outside the required ranges}
G11C16/225 (Preventing erasure, programming or reading when power supply voltages are outside the) appears on 309 US grants and 260 published applications in this corpus.
Search patents in G11C- Granted patents
- 309
- Published applications
- 260
- Assignees
- 120
- Inventors
- 505
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 4 | 0 |
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 3 | 0 |
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 4 | 0 |
| 1994 | 5 | 0 |
| 1995 | 3 | 0 |
| 1996 | 3 | 0 |
| 1997 | 3 | 0 |
| 1998 | 3 | 0 |
| 1999 | 4 | 0 |
| 2000 | 6 | 0 |
| 2001 | 6 | 3 |
| 2002 | 8 | 5 |
| 2003 | 4 | 4 |
| 2004 | 4 | 4 |
| 2005 | 4 | 7 |
| 2006 | 6 | 9 |
| 2007 | 4 | 3 |
| 2008 | 8 | 7 |
| 2009 | 3 | 10 |
| 2010 | 4 | 10 |
| 2011 | 8 | 6 |
| 2012 | 5 | 4 |
| 2013 | 5 | 7 |
| 2014 | 7 | 10 |
| 2015 | 17 | 17 |
| 2016 | 24 | 15 |
| 2017 | 19 | 17 |
| 2018 | 17 | 15 |
| 2019 | 16 | 26 |
| 2020 | 27 | 28 |
| 2021 | 12 | 10 |
| 2022 | 21 | 22 |
| 2023 | 15 | 9 |
| 2024 | 9 | 5 |
| 2025 | 4 | 3 |
| 2026 | 3 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Power loss protection and reset signal generation in memory systems14 Jul 2026US 12,682,959 B2Yangtze Memory Technologies Co., Ltd.
- Out-of-order programming of first wordline in a physical unit of a memory device30 Sep 2025US 12,430,246 B2Micron Technology, Inc.
- Techniques for enhanced system performance after retention loss26 Aug 2025US 12,399,827 B2Micron Technology, Inc.
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- Storage device configured to write data based on write energy and method of operating the same9 Apr 2026US 2026/0100229 A1Samsung Electronics Co., Ltd.
- Methods and apparatuses for operating a memory system12 Feb 2026US 2026/0047091 A1Yangtze Memory Technologies Co., Ltd.
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Most cited
By later US patents
- Semiconductor memory having both volatile and non-volatile functionality and method of operating232US 7,847,338 B22010
- Semiconductor memory having both volatile and non-volatile functionality and method of operating217US 8,159,878 B2Zeno Semiconductor, Inc. · 2012
- Semiconductor memory having both volatile and non-volatile functionality and method of operating215US 8,294,193 B2Zeno Semiconductor, Inc. · 2012
- Semiconductor memory having both volatile and non-volatile functionality and method of operating214US 8,059,459 B2Zeno Semiconductor, Inc. · 2011
- Data storage device and data writing method thereof182US 10,061,512 B2Silicon Motion, Inc. · 2018