Configurable low voltage detection threshold at a memory system
AssigneeMicron Technology, Inc.
InventorsCaixia Yang, Deping He
Life of this patent
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AssigneeMicron Technology, Inc.
InventorsCaixia Yang, Deping He
Estimating the term…
Methods, systems, and devices for configurable low voltage detection threshold at a memory system are described. The described techniques provide for a memory system to adjust a low voltage detection (LVD) threshold according to an interface speed of the memory system. The LVD threshold may be correlated with the interface speed, such that when operating at a relatively high interface speed, the memory system may set the LVD threshold to a relatively high value and when operating at a relatively low interface speed, the memory system may set the LVD threshold to a relatively low value. Additionally, or alternatively, the memory system may be configured to adjust the LVD threshold when changing an interface speed for subsequent operations. For example, the memory system may receive a command indicating a second interface speed and may set the LVD threshold to a second value that is associated with the second speed.
A memory system, comprising:
A non-transitory computer-readable medium storing code comprising instructions which, when executed by one or more processors of a memory system, cause the memory system to:
A method by a memory system, comprising:
Dependencies are inferred from the claim text.