G11C 11/2277
Verifying circuits or methods
Official title: {Verifying circuits or methods}
G11C11/2277 (Verifying circuits or methods) appears on 49 US grants and 48 published applications in this corpus.
Search patents in G11C- Granted patents
- 49
- Published applications
- 48
- Assignees
- 27
- Inventors
- 101
- Latest grant
- 23 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2012 | 1 | 2 |
| 2013 | 1 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 2 | 5 |
| 2018 | 7 | 4 |
| 2019 | 5 | 5 |
| 2020 | 7 | 7 |
| 2021 | 2 | 2 |
| 2022 | 10 | 9 |
| 2023 | 6 | 5 |
| 2024 | 5 | 1 |
| 2025 | 1 | 4 |
| 2026 | 2 | 4 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Operation method of ferroelectric memory23 Jun 2026US 12,665,012 B2Wuxi Smart Memories Technologies Co., Ltd.
- Nonvolatile memory device, storage device having the same, and operating method thereof28 Apr 2026US 12,614,577 B2Samsung Electronics Co., Ltd.
- Methods for activity-based memory maintenance operations and memory devices and systems employing the same11 Nov 2025US 12,468,589 B2
- Read destructive memory wear leveling system8 Oct 2024US 12,112,821 B2Seagate Technology LLC
- Methods for activity-based memory maintenance operations and memory devices and systems employing the same2 Apr 2024US 11,947,412 B2
- Memory device, operating method thereof, and memory system24 Sep 2026US 2026/0290420 A1Yangtze Memory Technologies Co., Ltd.
- Memory devices, operating methods thereof and memory systems24 Sep 2026US 2026/0290421 A1Yangtze Memory Technologies Holding Co., Ltd.
- Disturbance-resilient memory architecture with independent pass control for non-volatile transistor arrays30 Apr 2026US 2026/0120742 A1Georgia Tech Research Corporation
- Methods for activity-based memory maintenance operations and memory devices and systems employing the same5 Mar 2026US 2026/0064510 A1Lodestar Licensing Group LLC
- Operation method of ferroelectric memory27 Nov 2025US 2025/0364029 A1Wuxi Smart Memories Technologies Co., Ltd.
Most cited
By later US patents
- Ferroelectric memory cell recovery113US 9,697,913 B1Micron Technology, Inc. · 2017
- Ferroelectric random access memory with single plate line pulse during read80US 8,300,446 B2Texas Instruments Incorporated · 2012
- Memory cell arrangement and methods thereof12US 11,475,935 B1Ferroelectric Memory GmbH · 2022
- Memory device, memory cell arrangement, and methods thereof12US 11,508,426 B1Ferroelectric Memory GmbH · 2022
- Pulse shaping unit cell and array for symmetric updating12US 9,934,838 B1International Business Machines Corporation · 2018