G11C 11/18
Digital stores characterised by the use of particular electric or magnetic storage
Official title: using Hall-effect devices
G11C11/18 (Digital stores characterised by the use of particular electric or magnetic storage) appears on 581 US grants and 590 published applications in this corpus.
Search patents in G11C- Granted patents
- 581
- Published applications
- 590
- Assignees
- 189
- Inventors
- 917
- Latest grant
- 19 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 3 | 0 |
| 1992 | 3 | 0 |
| 1993 | 0 | 0 |
| 1994 | 6 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 3 | 0 |
| 2001 | 5 | 0 |
| 2002 | 6 | 2 |
| 2003 | 1 | 7 |
| 2004 | 9 | 8 |
| 2005 | 8 | 13 |
| 2006 | 7 | 6 |
| 2007 | 8 | 7 |
| 2008 | 6 | 6 |
| 2009 | 2 | 9 |
| 2010 | 7 | 8 |
| 2011 | 2 | 4 |
| 2012 | 9 | 4 |
| 2013 | 9 | 6 |
| 2014 | 8 | 22 |
| 2015 | 16 | 24 |
| 2016 | 35 | 24 |
| 2017 | 35 | 42 |
| 2018 | 31 | 40 |
| 2019 | 45 | 59 |
| 2020 | 53 | 70 |
| 2021 | 53 | 47 |
| 2022 | 61 | 59 |
| 2023 | 48 | 45 |
| 2024 | 38 | 31 |
| 2025 | 42 | 35 |
| 2026 | 12 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Magnetic memory element19 May 2026US 12,633,329 B2The University of Tokyo
- Magnetoresistance effect element and magnetic recording array for enhanced integration density19 May 2026US 12,633,331 B2TDK Corporation
- Magnetization rotational element and magnetoresistive effect element19 May 2026US 12,635,420 B2TDK Corporation
- Magnetic memory devices for differential sensing14 Apr 2026US 12,604,483 B2GLOBALFOUNDRIES U. S. Inc.
- Magnetic domain wall movement element and magnetic array14 Apr 2026US 12,604,668 B2TDK Corporation
- Magnetic memory cell based on stt-assisted sot writing comprising an n-type transistor and a p-type transistor as select transistors, and mram memory20 Aug 2026US 2026/0247870 A1Centre National De La Recherche Scientifique
- Magnetoresistive effect element and magnetic memory device6 Aug 2026US 2026/0231433 A1The University of Tokyo
- Current-induced synthetic antiferromagnetic spin-orbit torque structure with an oxide spacer7 May 2026US 2026/0130118 A1Powerchip Semiconductor Manufacturing Corporation
- Magnetic memory device and electronic device including the same30 Apr 2026US 2026/0123289 A1Samsung Electronics Co., Ltd.
- Magnetic memory30 Apr 2026US 2026/0123290 A1TDK Corporation
Most cited
By later US patents
- Magnetic spin injected field effect transistor and method of operation245US 5,654,566 A1997
- High density and high speed magneto-electronic logic family126US 6,140,838 A2000
- Hybrid hall effect device and method of operation115US 5,652,445 A1997
- Writable magnetic element113US 8,350,347 B2Centre National De La Recherche Scientifique · 2013
- Non-volatile magnetic random access memory106US 5,289,410 ACalifornia Institute of Technology · 1994