Magnetic domain wall movement element and magnetic array

A magnetic domain wall movement element comprising:

• a magnetoresistance effect element that has a reference layer, a nonmagnetic layer, and a magnetic domain wall movement layer in order from a side closer to a substrate;
• and
• a first magnetization fixed layer and a second magnetization fixed layer which are each in contact with the magnetic domain wall movement layer and are separated from each other,
• wherein the magnetic domain wall movement layer includes a plurality of ferromagnetic layers and a plurality of insertion layers that are thinner than the plurality of ferromagnetic layers and are alternately sandwiched between the plurality of ferromagnetic layers,
• wherein each of the plurality of ferromagnetic layers contains Co and Fe and has perpendicular magnetic anisotropy,
• wherein each of the plurality of insertion layers contains a nonmagnetic material selected from the group consisting of MgO, Mg—Al—O, Mg, W, Mo, and Ta,
• wherein at least one of the plurality of insertion layers includes a plurality of insertion regions that contain the nonmagnetic material and are dispersed in an island shape in a ferromagnetic layer containing Co and Fe, and
• wherein, when writing is performed, a write current is allowed to flow between the first magnetization fixed layer and the second magnetization fixed layer along the magnetic domain wall movement layer.