Magnetic memory devices for differential sensing
AssigneeGlobalFoundries U.S. Inc.
InventorJohannes Mueller
Life of this patent
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Abstract
A magnetic memory device is provided. The magnetic memory device includes a first magnetic tunnel junction (MTJ) stack, a second MTJ stack, and a spin-orbit torque (SOT) electrode. The second MTJ stack is adjacent to the first MTJ stack. The SOT electrode is connected to the first MTJ stack and the second MTJ stack, wherein the SOT electrode has a first electrode section along a first axis and a second electrode section along a second axis, and the second axis is spaced apart from and parallel to the first axis.
Claims19
A magnetic memory device, comprising:
- a first magnetic tunnel junction (MTJ) stack;
- a second MTJ stack adjacent to the first MTJ stack;
- a spin-orbit torque (SOT) electrode connected to the first MTJ stack and the second MTJ stack, wherein the SOT electrode has a first electrode section along a first axis and a second electrode section along a second axis, the second axis is spaced apart from and parallel to the first axis;
- and
- a connecting electrode section along a third axis substantially perpendicular to the first axis and the second axis, wherein the first axis and the second axis extend away from the third axis in opposite directions.
A magnetic memory device, comprising:
- a first magnetic tunnel junction (MTJ) stack;
- a first transistor coupled to the first MTJ stack;
- a second MTJ stack adjacent to the first MTJ stack;
- a second transistor coupled to the second MTJ stack;
- a spin-orbit torque (SOT) electrode connected to the first MTJ stack and the second MTJ stack, wherein the SOT electrode has a first electrode section along a first axis, a second electrode section along a second axis, the second axis is spaced apart from and parallel to the first axis, and a connecting electrode section along a third axis substantially perpendicular to the first axis and the second axis, wherein the first axis and the second axis extend away from the third axis in opposite directions;
- and
- a third transistor coupled to the SOT electrode.
A method of forming a magnetic memory device, comprising:
- forming a first magnetic tunnel junction (MTJ) stack and a second MTJ stack;
- and
- forming a spin-orbit torque (SOT) electrode including forming a first electrode section, forming a second electrode section, and forming a connecting electrode section, wherein the first electrode section is formed along a first axis, the second electrode section is formed along a second axis that is spaced apart from and parallel to the first axis, and the connecting electrode section is formed along a third axis that is substantially perpendicular to the first axis and the second axis, wherein the first axis and the second axis extend away from the third axis in opposite directions.
Dependencies are inferred from the claim text.