G11C 11/063
Bit-organised, such as 2l/2d-organisation or three-dimensional [3d]-organisation, i.e. for selection of an
Official title: bit-organised, such as 2L/2D-organisation or three-dimensional [3D]-organisation, i.e. for selection of an element by means of at least two coincident partial currents both for reading and for writing {(G11C11/06035 takes precedence)}
G11C11/063 (Bit-organised, such as 2l/2d-organisation or three-dimensional [3d]-organisation, i.e. for selection of an) appears on 5 US grants and 5 published applications in this corpus.
Search patents in G11C- Granted patents
- 5
- Published applications
- 5
- Assignees
- 3
- Inventors
- 7
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2015 | 1 | 2 |
| 2016 | 1 | 0 |
| 2017 | 0 | 0 |
| 2018 | 1 | 2 |
| 2019 | 1 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 0 |
| 2023 | 0 | 0 |
| 2024 | 0 | 0 |
| 2025 | 0 | 1 |
| 2026 | 1 | 0 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Methods and systems for writing state into superconducting circuits with integrated semiconductor-based circuits22 Sep 2026US 12,744,079 B2
- Semiconductor memory device and method of operating the same7 May 2019US 10,283,203 B2SK hynix Inc.
- Vertical selector for three-dimensional memory with planar memory cells18 Dec 2018US 10,157,653 B1SanDisk Technologies LLC
- Memory devices with local and global devices at substantially the same level above stacked tiers of memory cells and methods2 Feb 2016US 9,251,860 B2Micron Technology, Inc.
- Memory devices with local and global devices at substantially the same level above stacked tiers of memory cells and methods30 Jun 2015US 9,070,442 B2Micron Technology, Inc.
- Methods and systems for writing state into superconducting circuits with integrated semiconductor-based circuits29 May 2025US 2025/0174270 A1
- Vertical selector for three-dimensional memory with planar memory cells20 Dec 2018US 2018/0366171 A1SanDisk Technologies LLC
- Semiconductor memory device and method of operating the same15 Mar 2018US 2018/0075910 A1SK hynix Inc.
- Memory devices with local and global devices at substantially the same level above stacked tiers of memory cells and methods1 Oct 2015US 2015/0279432 A1Micron Technology, Inc.
- Memory devices with local and global devices at substantially the same level above stacked tiers of memory cells and methods5 Mar 2015US 2015/0063024 A1Micron Technology, Inc.
Most cited
By later US patents
- Memory devices with local and global devices at substantially the same level above stacked tiers of memory cells and methods17US 9,070,442 B2Micron Technology, Inc. · 2015
- Vertical selector for three-dimensional memory with planar memory cells13US 10,157,653 B1SanDisk Technologies LLC · 2018
- Memory devices with local and global devices at substantially the same level above stacked tiers of memory cells and methods1US 9,251,860 B2Micron Technology, Inc. · 2016