Vertical selector for three-dimensional memory with planar memory cells
AssigneeSanDisk Technologies LLC
InventorShaoping Li
Life of this patent
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Abstract
Apparatuses, systems, and methods are disclosed for non-volatile memory. A plurality of layers of planar non-volatile memory cells forms a three-dimensional memory array. A plurality of word lines are coupled to planar non-volatile memory cells. Word lines may extend horizontally across layers of memory cells. A plurality of selector columns are coupled to planar non-volatile memory cells. Selector columns extend vertically through layers of memory cells, and may include central conductors surrounded by one or more concentric selective layers. One or more selective layers may permit an electrical current through a cell, between a word line and a central conductor, in response to a voltage satisfying a threshold.
Claims19
An apparatus comprising:
- a plurality of layers of planar non-volatile memory cells forming a three-dimensional memory array;
- a plurality of word lines coupled to the planar non-volatile memory cells, the word lines extending horizontally across the plurality of layers;
- and
- a plurality of selector columns coupled to the planar non-volatile memory cells, the selector columns extending vertically through the plurality of layers, the selector columns comprising central conductors surrounded by a set of at least one concentric selective layers, wherein the set of at least one concentric selective layers permits an electrical current through a cell, between a word line and a central conductor, in response to a voltage satisfying a threshold.
A system comprising:
- a non-volatile memory element, the non-volatile memory element comprising
- a plurality of layers of planar magnetic tunnel junctions comprising memory cells of a three-dimensional non-volatile memory array;
- a plurality of word lines coupled to the memory cells, the word lines extending horizontally across the plurality of layers;
- a plurality of selector pillars coupled to the memory cells, the selector pillars extending vertically through the plurality of layers, the selector pillars comprising vertical metal connections and a set of at least one vertical selective layers, wherein the set of at least one vertical selective layers limits an electrical current through a cell, between a word line and a vertical metal connection, in response to a voltage failing to satisfy a threshold;
- a plurality of bit lines coupled to the selector pillars;
- and
- a controller that performs read operations and write operations by controlling word line and bit line voltages.
An apparatus comprising:
- means for storing data in a three-dimensional array of planar magnetoresistive memory cells;
- means for coupling word line voltages to the memory cells;
- and
- means for selectively permitting electrical current through the memory cells, wherein the means for selectively permitting electrical current comprises a set of at least one vertical selective layers extending vertically through multiple layers of the means for storing data, and is configured to permit an electrical current through a memory cell of the means for storing data in response to a voltage satisfying a threshold.
Dependencies are inferred from the claim text.