G11C 11/061
Using elements with single aperture or magnetic loop for storage, one element
Official title: using elements with single aperture or magnetic loop for storage, one element per bit, and for destructive read-out {(contains no documents, see G11C11/06007, G11C11/06014, G11C11/06021, G11C11/06028)}
G11C11/061 (Using elements with single aperture or magnetic loop for storage, one element) appears on 7 US grants and 8 published applications in this corpus.
Search patents in G11C- Granted patents
- 7
- Published applications
- 8
- Assignees
- 4
- Inventors
- 19
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2015 | 1 | 2 |
| 2016 | 1 | 0 |
| 2017 | 0 | 0 |
| 2018 | 1 | 2 |
| 2019 | 1 | 0 |
| 2020 | 0 | 1 |
| 2021 | 1 | 0 |
| 2022 | 0 | 1 |
| 2023 | 0 | 0 |
| 2024 | 1 | 0 |
| 2025 | 0 | 1 |
| 2026 | 1 | 1 |
By publication year. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Methods and systems for writing state into superconducting circuits with integrated semiconductor-based circuits22 Sep 2026US 12,744,079 B2
- On-chip non-volatile memory (NVM) search4 Jun 2024US 12,002,508 B2Western Digital Technologies, Inc.
- On-chip non-volatile memory (NVM) search26 Oct 2021US 11,158,369 B2Western Digital Technologies, Inc.
- Semiconductor memory device and method of operating the same7 May 2019US 10,283,203 B2SK hynix Inc.
- Vertical selector for three-dimensional memory with planar memory cells18 Dec 2018US 10,157,653 B1SanDisk Technologies LLC
- Boundary offset control for memory block reading16 Jul 2026US 2026/0204328 A1Micron Technology, Inc.
- Methods and systems for writing state into superconducting circuits with integrated semiconductor-based circuits29 May 2025US 2025/0174270 A1
- On-chip non-volatile memory (nvm) search3 Feb 2022US 2022/0036945 A1Western Digital Technologies, Inc.
- On-chip non-volatile memory (nvm) search2 Jul 2020US 2020/0211640 A1Western Digital Technologies, Inc.
- Vertical selector for three-dimensional memory with planar memory cells20 Dec 2018US 2018/0366171 A1SanDisk Technologies LLC
Most cited
By later US patents
- Memory devices with local and global devices at substantially the same level above stacked tiers of memory cells and methods17US 9,070,442 B2Micron Technology, Inc. · 2015
- Vertical selector for three-dimensional memory with planar memory cells13US 10,157,653 B1SanDisk Technologies LLC · 2018
- On-chip non-volatile memory (NVM) search4US 11,158,369 B2Western Digital Technologies, Inc. · 2021
- Memory devices with local and global devices at substantially the same level above stacked tiers of memory cells and methods1US 9,251,860 B2Micron Technology, Inc. · 2016