G01P 2015/0877
Using integrated interconnect structures
Official title: {using integrated interconnect structures}
G01P2015/0877 (Using integrated interconnect structures) appears on 11 US grants and 19 published applications in this corpus.
Search patents in G01P- Granted patents
- 11
- Published applications
- 19
- Assignees
- 12
- Inventors
- 41
- Latest grant
- 30 Sep 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2011 | 0 | 4 |
| 2012 | 0 | 1 |
| 2013 | 1 | 0 |
| 2014 | 2 | 3 |
| 2015 | 0 | 0 |
| 2016 | 1 | 1 |
| 2017 | 1 | 2 |
| 2018 | 0 | 0 |
| 2019 | 2 | 1 |
| 2020 | 0 | 2 |
| 2021 | 1 | 0 |
| 2022 | 1 | 0 |
| 2023 | 0 | 2 |
| 2024 | 0 | 1 |
| 2025 | 2 | 0 |
| 2026 | 0 | 2 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- In-plane and out-of-plane accelerometer30 Sep 2025US 12,428,291 B2Murata Manufacturing Co., Ltd.
- Method for producing an integrated circuit pointed element comprising etching first and second etchable materials with a particular etchant to form an open crater in a projection15 Jul 2025US 12,360,135 B2STMicroelectronics (Rousset) SAS
- Method for producing an integrated circuit pointed element comprising etching first and second etchable materials with a particular etchant to form an open crater in a project27 Dec 2022US 11,536,872 B2STMicroelectronics (Rousset) SAS
- Strain gauge sensor accelerometer with improved accuracy10 Aug 2021US 11,085,945 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Method for producing an integrated circuit pointed element comprising etching first and second etchable materials with a particular etchant to form an open crater in a projection13 Aug 2019US 10,379,254 B2STMicroelectronics (Rousset) SAS
- Sensor Module2 Apr 2026US 2026/0092938 A1Seiko Epson Corporation
- High dynamic range vibrating beam accelerometer19 Mar 2026US 2026/0079174 A1Honeywell International Inc.
- In-plane and out-of-plane accelerometer12 Sep 2024US 2024/0300805 A1Murata Manufacturing Co., Ltd.
- Accelerometer, inertial measurement unit imu, and electronic device24 Aug 2023US 2023/0266360 A1Huawei Technologies Co., Ltd.
- Method for producing an integrated circuit pointed element comprising etching first and second etchable materials with a particular etchant to form an open crater in a project16 Mar 2023US 2023/0085284 A1STMicroelectronics (Rousset) SAS
Most cited
By later US patents
- Semiconductor physical quantity sensor12US 8,759,926 B2Denso Corporation · 2014
- Strain gauge sensor accelerometer with improved accuracy8US 11,085,945 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives · 2021
- Region divided substrate and semiconductor device4US 8,455,973 B2Denso Corporation · 2013
- Method for producing an integrated circuit pointed element comprising etching first and second etchable materials with a particular etchant to form an open crater in a projection2US 10,379,254 B2STMicroelectronics (Rousset) SAS · 2019
- Semiconductor device and method including an intertial mass element2US 9,679,857 B2NXP B. V. · 2017