C30B 7/105
Using ammonia as solvent, i.e. ammonothermal processes
Official title: {using ammonia as solvent, i.e. ammonothermal processes}
C30B7/105 (Using ammonia as solvent, i.e. ammonothermal processes) appears on 133 US grants and 178 published applications in this corpus.
Search patents in C30B- Granted patents
- 133
- Published applications
- 178
- Assignees
- 36
- Inventors
- 141
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2003 | 1 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 1 | 1 |
| 2008 | 0 | 1 |
| 2009 | 1 | 3 |
| 2010 | 1 | 7 |
| 2011 | 1 | 11 |
| 2012 | 3 | 9 |
| 2013 | 7 | 9 |
| 2014 | 5 | 15 |
| 2015 | 6 | 15 |
| 2016 | 7 | 20 |
| 2017 | 15 | 10 |
| 2018 | 21 | 15 |
| 2019 | 15 | 12 |
| 2020 | 9 | 10 |
| 2021 | 9 | 8 |
| 2022 | 4 | 5 |
| 2023 | 11 | 10 |
| 2024 | 4 | 10 |
| 2025 | 4 | 2 |
| 2026 | 8 | 4 |
By publication year. 2026 runs to 8 Oct.
Recent patents
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Most cited
By later US patents
- Nitride crystal with removable surface layer and methods of manufacture117US 8,148,801 B2Soraa, Inc. · 2012
- Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture89US 7,976,630 B2Soraa, Inc. · 2011
- Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate87US 6,592,663 B1Ricoh Company, Ltd. · 2003
- Nitride crystal with removable surface layer and methods of manufacture64US 8,329,511 B2Soraa, Inc. · 2012
- High pressure apparatus with stackable rings51US 8,435,347 B2Elmhurst Research, Inc. · 2013