Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
AssigneeRicoh Company, Ltd.
InventorsSeiji Sarayama, Masahiko Shimada, Hisanori Yamane, Hirokazu Iwata
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Abstract
A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenishing a compound containing N from a source outside the reaction vessel.
Claims51
A method of producing a single crystal body of a group III nitride, comprising:
- forming a molten flux of a volatile metal element in a pressurized reaction vessel confining therein said molten flux together with an atmosphere containing N (nitrogen), such that said molten flux contains a group III element in addition to said volatile metal element;
- growing a nitride of said group III element in the form of a single crystal body in said molten flux;
- and
- supplying a compound containing N directly into the atmosphere in said reaction vessel from a source located outside said reaction vessel.
A method of producing a single crystal body of a cubic GaN, comprising:
- an forming a molten flux of K in a pressurized reaction vessel confining therein said molten flux together with an atmosphere containing N (nitrogen), such that said molten flux contains Ga in addition to K;
- and
- precipitating a single crystal body of cubic GaN in said molten flux.
A method of fabricating a semiconductor device having a bulk crystal substrate of a nitride comprising:
- forming a molten flux of a volatile metal element in a pressurized reaction vessel confining therein said molten flux together with an atmosphere containing N (nitrogen), such that said molten flux contains a group III element in addition to said volatile metal element;
- growing a nitride bulk crystal of said group III element in said molten flux;
- and
- supplying a compound containing N directly into the atmosphere in said reaction vessel from a source located outside said reaction vessel.
A method of fabricating a semiconductor device having a bulk crystal substrate of cubic GaN, comprising:
- forming a molten flux of K in a pressurized reaction vessel confining therein said molten flux together with an atmosphere containing N (nitrogen), such that said molten flux contains Ga in addition to K;
- and
- growing a bulk crystal of GaN of a cubic crystal system at a melt surface of said molten flux.
An apparatus for growing a group III nitride bulk crystal, comprising:
- a pressurized reaction vessel having a space therein for holding a crucible;
- a supply line connected to said reaction vessel, said supply line supplying a pressurized gas of a compound containing N (nitrogen) directly into an atmosphere in said reaction vessel;
- and
- a heater disposed outside said reaction vessel, said heater heating said reaction vessel externally so as to form a molten flux of a volatile metal element and a group III element in said crucible.
Dependencies are inferred from the claim text.