C30B 7/10
Single-crystal growth from solutions using solvents which are liquid at normal temperature
Official title: by application of pressure, e.g. hydrothermal processes
C30B7/10 (Single-crystal growth from solutions using solvents which are liquid at normal temperature) appears on 323 US grants and 396 published applications in this corpus.
Search patents in C30B- Granted patents
- 323
- Published applications
- 396
- Assignees
- 150
- Inventors
- 531
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 2 |
| 2003 | 2 | 1 |
| 2004 | 0 | 9 |
| 2005 | 0 | 6 |
| 2006 | 5 | 7 |
| 2007 | 3 | 13 |
| 2008 | 7 | 9 |
| 2009 | 6 | 13 |
| 2010 | 9 | 21 |
| 2011 | 8 | 21 |
| 2012 | 10 | 15 |
| 2013 | 16 | 22 |
| 2014 | 16 | 29 |
| 2015 | 15 | 26 |
| 2016 | 19 | 35 |
| 2017 | 25 | 23 |
| 2018 | 40 | 23 |
| 2019 | 24 | 24 |
| 2020 | 21 | 15 |
| 2021 | 23 | 12 |
| 2022 | 10 | 18 |
| 2023 | 19 | 15 |
| 2024 | 14 | 22 |
| 2025 | 10 | 7 |
| 2026 | 12 | 8 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Synthetic diamond from a levitating supersaturated solvent at low pressure: process, apparatus, and material25 Aug 2026US 12,716,147 B2Cosmic Diamonds LLC
- Heater for retrograde solvothermal crystal growth, method of making, and method of use18 Aug 2026US 12,709,821 B2KYOCERA Corporation
- Gallium nitride crystal, gallium nitride substrate, and method for producing gallium nitride crystal28 Jul 2026US 12,692,624 B2Mitsubishi Chemical Corporation
- Group III nitride substrate with oxygen gradient, method of making, and method of use7 Jul 2026US 12,677,604 B2SLT Technologies, Inc.
- Gallium nitride crystal, gallium nitride substrate, and method for producing gallium nitride crystal1 Oct 2026US 2026/0297809 A1Mitsubishi Chemical Corporation
- Methods for synthesizing iii-v nanocrystals3 Sep 2026US 2026/0258577 A1The University of Chicago
- High quality group-iii metal nitride crystals, methods of making, and methods of use20 Aug 2026US 2026/0247878 A1KYOCERA Corporation
- Battery cathode material, its precursor, method for its manufacture, and lithium-ion battery11 Jun 2026US 2026/0159987 A1Hon Hai Precision Industry Co., Ltd.
- Lead decahydroxydecaborate dihydroxy monoborate monohydrate nonlinear optical crystal, preparation method and application thereof21 May 2026US 2026/0139403 A1Xinjiang Normal University
Most cited
By later US patents
- Bulk monocrystalline gallium nitride163US 6,656,615 B2Ammono Sp. Z.O.O. · 2003
- Nitride crystal with removable surface layer and methods of manufacture117US 8,148,801 B2Soraa, Inc. · 2012
- Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture89US 7,976,630 B2Soraa, Inc. · 2011
- High temperature high pressure capsule for processing materials in supercritical fluids88US 7,125,453 B2General Electric Company · 2006
- Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate87US 6,592,663 B1Ricoh Company, Ltd. · 2003