Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture
AssigneeSoraa, Inc.
InventorsChristiane Poblenz, James S. Speck, Derrick S. Kamber
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Abstract
A high-quality, large-area seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal comprises double-side GaN growth on a large-area substrate. The seed crystal is of relatively low defect density and has flat surfaces free of bowing. The seed crystal is useful for producing large-volume, high-quality bulk GaN crystals by ammonothermal growth methods for eventual wafering into large-area GaN substrates for device fabrication.
Claims20
A method of fabricating crystalline material containing at least a Group III element and N comprising:
- providing a crystalline substrate having a first surface and a second opposite surface;
- forming a first layer of crystalline material having a first thickness overlying the first surface of the substrate;
- providing the substrate having the overlying first layer of crystalline material;
- and
- forming a second layer of crystalline material also having substantially the same first thickness and having the same composition as the first layer of crystalline material overlying the second surface of the substrate such that the substrate together with the first layer of crystalline material and the second layer of crystalline material creates a structure substantially free from bow.
A method of fabricating crystalline material comprising:
- providing a crystalline substrate having a first surface and a second opposite surface;
- forming a first layer of crystalline material containing at least a Group III element and N having a first thickness overlying the first surface of the substrate;
- and
- forming a second layer of crystalline material also having substantially the same first thickness and having the same composition as the first layer of crystalline material overlying the second surface of the substrate such that the substrate together with the first layer of crystalline material and the second layer of crystalline material creates a structure substantially free from bow.
Dependencies are inferred from the claim text.