Gallium nitride crystal, gallium nitride substrate, and method for producing gallium nitride crystal

A gallium nitride crystal which contains F and

• in which a total content of halogen elements other than F is 1/100 or less of a content of F,
• the gallium nitride crystal comprising a main surface 1 having an inclination of 0 degrees or more and 10 degrees or less from a (000-1) crystal plane, wherein the main surface 1 is a specific main surface A satisfying at least one of the following conditions (A1) to (A3):
• (A1) a first line segment which is a virtual line segment extending in a first direction on the specific main surface A and having a length of 40 mm and a second line segment which is a virtual line segment extending in a second direction perpendicular to the first direction on the specific main surface A and having a length of 40 mm can be drawn, and a facet growth region density in a random square region of 10 mm×10 mm on the specific main surface A does not exceed 500 cm−2;
• (A2) a first line segment which is a virtual line segment extending in a first direction on the specific main surface A and having a length of 40 mm and a second line segment which is a virtual line segment extending in a second direction perpendicular to the first direction on the specific main surface A and having a length of 40 mm can be drawn, and at least one square region of 20 mm×20 mm having a facet growth region density of less than 5 cm−2 is found in the specific main surface A;
• and
• (A3) a first line segment which is a virtual line segment extending in a first direction on the specific main surface A and having a length of 40 mm and a second line segment which is a virtual line segment extending in a second direction perpendicular to the first direction on the specific main surface A and having a length of 40 mm can be drawn, and a ratio of a total area of facet growth regions to an area of the specific main surface A (total area of facet growth regions/area of specific main surface A) is 40% or less.