C30B 29/26
With formula bme2o4, wherein b is mg, ni, co, al, zn, or
Official title: with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
C30B29/26 (With formula bme2o4, wherein b is mg, ni, co, al, zn, or) appears on 59 US grants and 49 published applications in this corpus.
Search patents in C30B- Granted patents
- 59
- Published applications
- 49
- Assignees
- 46
- Inventors
- 150
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 3 | 0 |
| 1983 | 3 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 4 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 4 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 1 |
| 2003 | 0 | 1 |
| 2004 | 0 | 1 |
| 2005 | 1 | 2 |
| 2006 | 1 | 1 |
| 2007 | 0 | 0 |
| 2008 | 1 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 1 |
| 2011 | 1 | 1 |
| 2012 | 1 | 1 |
| 2013 | 0 | 1 |
| 2014 | 0 | 1 |
| 2015 | 2 | 1 |
| 2016 | 0 | 2 |
| 2017 | 1 | 4 |
| 2018 | 2 | 2 |
| 2019 | 1 | 1 |
| 2020 | 2 | 5 |
| 2021 | 1 | 1 |
| 2022 | 4 | 0 |
| 2023 | 3 | 5 |
| 2024 | 5 | 9 |
| 2025 | 4 | 7 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Hierarchical inverted/normal cobalt ferrite nano-chessboard6 Oct 2026US 12,753,527 B2Morgan State University
- Growth method for single crystals of magnesium aluminate spinel by edge-defined film-fed growth technique5 May 2026US 12,618,170 B2Beijing Sinoma Synthetic Crystals Co., Ltd.
- Epitaxial oxide transistor4 Nov 2025US 12,464,863 B2Silanna UV Technologies Pte Ltd
- Epitaxial oxide transistor14 Oct 2025US 12,446,367 B2Silanna UV Technologies Pte Ltd
- Epitaxial oxide transistor3 Jun 2025US 12,324,276 B2Silanna UV Technologies Pte Ltd
- Epitaxial oxide transistor9 Apr 2026US 2026/0101611 A1Silanna UV Technologies Pte Ltd
- Single-crystal cathode material and preparing method thereof11 Dec 2025US 2025/0376783 A1Guizhou Zhenhua E-CHEM Inc.
- Epitaxial Oxide Integrated Circuit20 Nov 2025US 2025/0359399 A1Silanna UV Technologies Pte Ltd
- Epitaxial oxide transistor11 Sep 2025US 2025/0287735 A1Silanna UV Technologies Pte Ltd
- P-type spinel structures as a p-n heteroepitaxial interface to b-ga2o328 Aug 2025US 2025/0275205 A1The Government of the United States of America, as represented by the Secretary of the Navy
Most cited
By later US patents
- Method for producing a single crystal31US 4,519,870 ANGK Insulators, Ltd. · 1985
- Epitaxial oxide materials, structures, and devices20US 11,522,103 B1Silanna UV Technologies Pte Ltd · 2022
- Altering the appearance of corundum crystals17US 4,039,726 AAstrid Corporation, Limited · 1977
- Method for producing a single crystal17US 4,444,615 ANGK Insulators, Ltd. · 1984
- Method of forging spinel domes16US 4,347,210 ARaytheon Company · 1982