Method for producing a single crystal
AssigneeNGK Insulators, Ltd.
InventorsSoichiro Matsuzawa, Syunzo Mase
Life of this patent
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Abstract
A single crystal is produced by contacting a polycrystal showing a discontinuous crystal grain growth at a temperature not lower than T.degree. C. to a seed single crystal having substantially the same crystal structure as the polycrystal and heating the contacted crystals at a temperature (t.degree. C.) lower than the temperature T.degree. C. to cause a solid phase reaction at an interface between microcrystal grains composing the polycrystal and the seed single crystal, whereby the microcrystal grains in the polycrystal are integrated to the seed single crystal to grow the single crystal.
Claims17
In a method for producing a single crystal which comprises contacting a seed single crystal to a fine grain polycrystal body having substantially the same crystal structure as the seed single crystal, and heating the contacted crystals to grow the single crystal towards the polycrystal, the improvement comprising the steps of:
- (a) using a polycrystal having the property which causes a discontinuous crystal grain growth in the course of heating, (b) heating the contacted crystals to grow the single crystal at a temperature (t.degree.C.) which is lower than the temperature (T.degree.C.) at which the discontinuous crystal grain growth is caused in the polycrystal, and (c) integrating a thickness of at least 0.25 mm of the polycrystal to the seed single crystal to grow the single crystal.
Dependencies are inferred from the claim text.