C30B 28/06
By normal freezing or freezing under temperature gradient
Official title: by normal freezing or freezing under temperature gradient
C30B28/06 (By normal freezing or freezing under temperature gradient) appears on 65 US grants and 113 published applications in this corpus.
Search patents in C30B- Granted patents
- 65
- Published applications
- 113
- Assignees
- 69
- Inventors
- 210
- Latest grant
- 23 Sep 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2006 | 1 | 1 |
| 2007 | 0 | 3 |
| 2008 | 0 | 4 |
| 2009 | 0 | 14 |
| 2010 | 2 | 9 |
| 2011 | 5 | 14 |
| 2012 | 6 | 13 |
| 2013 | 6 | 20 |
| 2014 | 5 | 8 |
| 2015 | 11 | 6 |
| 2016 | 6 | 3 |
| 2017 | 5 | 9 |
| 2018 | 7 | 2 |
| 2019 | 6 | 1 |
| 2020 | 1 | 1 |
| 2021 | 1 | 1 |
| 2022 | 0 | 0 |
| 2023 | 1 | 2 |
| 2024 | 1 | 1 |
| 2025 | 1 | 1 |
By publication year.
Recent patents
- Compositions including metal organic frame for inhibiting formation or growth of ice crystallization and preparing method thereof23 Sep 2025US 12,421,258 B2Gwangju Institute of Science and Technology
- Method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods27 Feb 2024US 11,913,133 B2Lintech
- Silicon ingot, silicon block, silicon substrate, method for manufacturing silicon ingot, and solar cell1 Aug 2023US 11,713,515 B2KYOCERA Corporation
- Yttrium-doped barium fluoride crystal and preparation method and use thereof12 Oct 2021US 11,142,689 B2R&D Center, Shanghai Institute of Ceramics
- Polycrystalline silicon column and polycrystalline silicon wafer3 Nov 2020US 10,825,940 B2Sino-American Silicon Products Inc.
- Additively manufactured articles having a microstructure with a high gamma-prime volume fraction22 May 2025US 2025/0163811 A1Arcam AB
- Silicon ingot, silicon block, silicon substrate, method for manufacturing silicon ingot, and solar cell25 Jan 2024US 2024/0026568 A1KYOCERA Corporation
- Compositions including metal organic frame for inhibiting formation or growth of ice crystallization and preparing method thereof11 May 2023US 2023/0143886 A1Gwangju Institute of Science and Technology
- Method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods23 Feb 2023US 2023/0059953 A1Lintech
- Silicon ingot, silicon block, silicon substrate, method for manufacturing silicon ingot, and solar cell9 Sep 2021US 2021/0277537 A1KYOCERA Corporation
Most cited
By later US patents
- Polycrystalline group III metal nitride with getter and method of making54US 8,461,071 B2Soraa, Inc. · 2013
- Systems and methods for preparing epitaxially textured polycrystalline films9US 8,012,861 B2The Trustees of Columbia University in the City of New York · 2011
- Method and apparatus for producing a dislocation-free crystalline sheet8US 7,816,153 B2Varian Semiconductor Equipment Associates, Inc. · 2010
- Process for producing a crystalline silicon ingot7US 7,141,114 B2REC Silicon Inc · 2006
- Method of controlling a thickness of a sheet formed from a melt7US 8,475,591 B2Varian Semiconductor Equipment Associates, Inc. · 2013