Method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods

A method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods, the method comprising the steps of:

• manufacturing the single crystal or polycrystalline silicon rods each having the shape of a quadrilateral pillar;
• putting the single crystal or polycrystalline quadrilateral pillar-shaped silicon rods into the crucible having circular horizontal sectional shape in such a manner as to be arranged close to one another along the inner peripheral surface of the crucible to thus form a space portion inside the single crystal or polycrystalline silicon rods, into which silicon chunks are put, and the oxygen exhaust passages between the inner peripheral surface of the crucible and the respective surfaces of the single crystal or polycrystalline silicon rods oriented toward the inner peripheral surface of the crucible;
• putting the silicon chunks into the space portion of the crucible;
• and
• melting and crystallizing the silicon chunks and the silicon rods,
• wherein the single crystal or polycrystalline silicon rods are pillars each having the shape of a rectangular pillar with a concave one side, and the concave portion of the rectangular pillar is oriented toward the inner peripheral surface of the crucible.