C30B 15/22
Stabilisation or shape controlling of the molten zone near the pulled crystal
Official title: Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
C30B15/22 (Stabilisation or shape controlling of the molten zone near the pulled crystal) appears on 361 US grants and 284 published applications in this corpus.
Search patents in C30B- Granted patents
- 361
- Published applications
- 284
- Assignees
- 159
- Inventors
- 757
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 8 | 0 |
| 1977 | 4 | 0 |
| 1978 | 6 | 0 |
| 1979 | 4 | 0 |
| 1980 | 10 | 0 |
| 1981 | 7 | 0 |
| 1982 | 3 | 0 |
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 8 | 0 |
| 1986 | 11 | 0 |
| 1987 | 5 | 0 |
| 1988 | 0 | 0 |
| 1989 | 4 | 0 |
| 1990 | 9 | 0 |
| 1991 | 1 | 0 |
| 1992 | 10 | 0 |
| 1993 | 3 | 0 |
| 1994 | 3 | 0 |
| 1995 | 6 | 0 |
| 1996 | 2 | 0 |
| 1997 | 6 | 0 |
| 1998 | 14 | 0 |
| 1999 | 17 | 0 |
| 2000 | 12 | 0 |
| 2001 | 11 | 3 |
| 2002 | 11 | 7 |
| 2003 | 8 | 5 |
| 2004 | 3 | 2 |
| 2005 | 2 | 5 |
| 2006 | 2 | 5 |
| 2007 | 5 | 5 |
| 2008 | 2 | 8 |
| 2009 | 3 | 12 |
| 2010 | 3 | 20 |
| 2011 | 4 | 10 |
| 2012 | 6 | 11 |
| 2013 | 7 | 8 |
| 2014 | 15 | 12 |
| 2015 | 5 | 10 |
| 2016 | 8 | 16 |
| 2017 | 15 | 13 |
| 2018 | 14 | 6 |
| 2019 | 11 | 13 |
| 2020 | 3 | 15 |
| 2021 | 9 | 11 |
| 2022 | 12 | 15 |
| 2023 | 8 | 23 |
| 2024 | 8 | 29 |
| 2025 | 15 | 12 |
| 2026 | 15 | 8 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Single crystal ingot puller with high-power laser beam as auxiliary heating source1 Sep 2026US 12,723,324 B2GlobalWafers Co., Ltd.
- Methods for automatically controlling material suction in a process of pulling-up of a monocrystal1 Sep 2026US 12,723,326 B2Tcl Zhonghuan Renewable Energy Technology Co., Ltd.
- Manufacturing method of single crystals21 Jul 2026US 12,686,942 B2Sumco Corporation
- Large-scale compound semiconductor single crystal growth system and method9 Jun 2026US 12,649,979 B2The 13th Research Institute of China Electronics Technology Group Corporation
- Methods for producing off-orientation single crystal silicon wafers2 Jun 2026US 12,644,200 B2GlobalWafers Co., Ltd.
- Ingot growth device and method for controlling ingot growth8 Oct 2026US 2026/0308800 A1Hanwha Solutions Corporation
- Methods for producing off-orientation single crystal silicon wafers17 Sep 2026US 2026/0275567 A1GlobalWafers Co., Ltd.
- Method for measuring melt gap9 Jul 2026US 2026/0195874 A1SK Siltron Co., Ltd.
- Methods for producing a crucible2 Jul 2026US 2026/0185261 A1GlobalWafers Co., Ltd.
- Non-contact systems and methods for determining distance between silicon melt and reflector in a crystal puller2 Jul 2026US 2026/0185262 A1GlobalWafers Co., Ltd.
Most cited
By later US patents
- Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same63US 5,968,264 AShin-Etsu Handotai Co., Ltd. · 1999
- Machine vision system for analyzing features based on multiple object images49US 6,175,652 B1Cognex Corporation · 2001
- Process and apparatus for controlling the melt level while pulling single crystals41US 5,437,242 AWacker-Chemitronic Gessellschaft fuer Elektronik-Grundstoffe mbH · 1995
- Oxygen precipitation control in czochralski-grown silicon cyrstals40US 5,474,020 ATexas Instruments Incorporated · 1995
- Method for controlling growth of a silicon crystal36US 5,653,799 AMEMC Electronic Materials, Inc. · 1997