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US 2026/0185261 A1Published application
Methods for producing a crucible
AssigneeGlobalWafers Co., Ltd.
InventorsJaeWoo Ryu, Carissima Marie Hudson, TaeWon Yuk, JunHwan Ji
Life of this patent
Estimating the term…
Abstract
Synesthetic quartz crucibles for holding a silicon melt during growth of single crystal silicon ingots are disclosed. The crucibles may include a coating disposed on the inner and outer surface of the crucible body along the rim. The coating extends only partially down the sidewall of the crucible and may extend to or beyond the melt line of the crucible.
Claims10
A method for producing a crucible, the method comprising:
- providing a body having a floor and a sidewall extending up from the floor, the floor and sidewall defining a cavity for holding a silicon melt, the sidewall having a top, an inner surface and an outer surface, the sidewall having a height that extends from the floor to the top of the sidewall, the body comprising synthetic quartz;
- and
- applying a coating on a first inner surface area of the inner surface of the sidewall, the coating comprising magnesium, calcium, strontium or barium, the first inner surface area extending only from the top of the sidewall to a distance D1 from the top of the sidewall, wherein the distance D1 is less than the height of the sidewall.
Dependencies are inferred from the claim text.