C30B 13/20
By induction
Official title: by induction, e.g. hot wire technique (C30B13/18 takes precedence)
C30B13/20 (By induction) appears on 63 US grants and 35 published applications in this corpus.
Search patents in C30B- Granted patents
- 63
- Published applications
- 35
- Assignees
- 27
- Inventors
- 93
- Latest grant
- 7 Nov 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 1 | 0 |
| 1978 | 3 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 3 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 0 | 0 |
| 1988 | 2 | 0 |
| 1989 | 4 | 0 |
| 1990 | 2 | 0 |
| 1991 | 4 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 1 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 1 | 1 |
| 2009 | 0 | 3 |
| 2010 | 0 | 1 |
| 2011 | 0 | 5 |
| 2012 | 3 | 0 |
| 2013 | 4 | 4 |
| 2014 | 1 | 1 |
| 2015 | 1 | 5 |
| 2016 | 3 | 4 |
| 2017 | 4 | 1 |
| 2018 | 4 | 3 |
| 2019 | 1 | 1 |
| 2020 | 1 | 3 |
| 2021 | 4 | 1 |
| 2022 | 0 | 0 |
| 2023 | 2 | 0 |
| 2024 | 0 | 0 |
| 2025 | 0 | 0 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Thin film crystallization process7 Nov 2023US 11,810,785 B2Lux Semiconductors, Inc.
- Method for producing a single crystal from semiconductor material by the FZ method; device for carrying out the method and semiconductor silicon wafer17 Oct 2023US 11,788,201 B2Siltronic AG
- Method and apparatus for pulling a single crystal by the FZ method1 Jun 2021US 11,021,808 B2Siltronic AG
- Method for pulling a single crystal by the FZ method comprising reducing the power of a melting apparatus based on geometrical dimensions of the drop27 Apr 2021US 10,988,856 B2Siltronic AG
- Single crystal production apparatus and single crystal producing method13 Apr 2021US 10,975,493 B2
- Production device and production method20 Aug 2026US 2026/0242975 A1A. C. Company
- Method for producing a single crystal from semiconductor material by the fz method; device for carrying out the method and semiconductor silicon wafer22 Jul 2021US 2021/0222319 A1Siltronic AG
- Thin film crystallization process15 Oct 2020US 2020/0328081 A1Lux Semiconductors, Inc.
- Method and apparatus for pulling a single crystal by the fz method14 May 2020US 2020/0149183 A1Siltronic AG
- Method and apparatus for pulling a single crystal by the fz method7 May 2020US 2020/0141025 A1Siltronic AG
Most cited
By later US patents
- Induction melting of metals without a crucible21US 5,003,551 AInductotherm Corp. · 1991
- Method and apparatus for crystal ribbon growth19US 5,069,742 A1991
- Apparatus for zone regrowth of crystal ribbons16US 4,873,063 A1989
- Induction coil in the form of a pancake coil for crucible-free zone melting13US 4,538,279 ASiemens Aktiengesellschaft · 1985
- Float zone silicon wafer manufacturing system and related process13US 9,499,921 B2Rayton Solar Inc. · 2016