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US 10,975,493 B2Granted
Single crystal production apparatus and single crystal producing method
OwnerShin Akutsuinventor
Life of this patent
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Abstract
To provide a single crystal production apparatus capable of efficiently producing a single crystal of relatively high quality, by cooling a melting zone, the device including: a heating part that forms the melting zone from a raw material by irradiation of light; and a supporting part that supports the melting zone in a non-contact manner.
Claims15
A single crystal production apparatus that produces a single crystal by cooling a melting zone, the single crystal production apparatus comprising:
- a raw material grip that grips a raw material;
- a seed crystal grip that grips a seed crystal;
- a heater that forms the melting zone from the raw material by irradiation of light;
- an induction coil disposed around the melting zone and supporting the melting zone in a non-contact manner,
- wherein the seed crystal grip is disposed at a position in a vertically bottom direction, and the raw material grip is disposed at a position in a vertically top direction,
- wherein a diameter of the induction coil becomes smaller from the vertically top direction to the vertically bottom direction,
- wherein the heater includes a plurality of infrared generators and a plurality of spheroidal mirrors as reflectors, the spheroidal mirrors having a common focal point and an other focal point in the vertically top direction viewed from the common focal point, and an infrared generator of the infrared generators being disposed at the other focal point;
- an infrared ray shielding tube, connected to a driving mechanism, to adjust the cooling in the melting zone to form the single crystal;
- and
- an atmosphere introduction port and an atmosphere discharge port to control pressure in a furnace for growing the single crystal, a lower shaft flange and an upper shaft flange isolating the furnace from outside.
7 more elements
A single crystal producing method for producing a single crystal by cooling a melting zone, the single crystal producing method comprising:
- arranging an induction coil around the melting zone formed from a raw material by irradiation of light in a state of gripping a seed crystal at a position in a vertically bottom direction and gripping the raw material at a position in a vertically top direction, so that a diameter of the induction coil becomes smaller from the vertically top direction to the vertically bottom direction;
- supporting the melting zone by the induction coil in a non-contact manner, wherein a plurality of infrared generators and a plurality of spheroidal mirrors as reflectors provide the irradiation of light, the spheroidal mirrors having a common focal point and an other focal point in the vertically top direction viewed from the common focal point, and an infrared generator of the infrared generators being disposed at the other focal point;
- adjusting the cooling in the melting zone to form the single crystal by an infrared ray shielding tube connected to a driving mechanism;
- and
- controlling pressure in a furnace by an atmosphere introduction port and an atmosphere discharge port, for growing the single crystal, a lower shaft flange and an upper shaft flange isolating the furnace from outside.
2 more elements
Dependencies are inferred from the claim text.