Method and apparatus for crystal ribbon growth
OwnerCarl E. Bleilinventor
Life of this patent
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Abstract
Crystals are grown in ribbon shapes by an apparatus for supporting a film of source material, capacitive electrodes contacting the film and heat pipes in thermal contact with the electrodes for first heating the material through the electrodes to near its melting temperature and then for controllably cooling the electrodes, an rf heater using the electrodes for melting the film in a zone, a heat pipe for causing solidification along one surface of the melt zone to form a ribbon, a pulling mechanism for moving the ribbon from the melt zone, a heater for melting bulk replenishing material to replenish the melt, and an auxiliary heating device for heating the ribbon after leaving the zone to prevent dendritic growth by maintaining low axial temperature gradients.
Claims3
A method of growing a crystal ribbon from source material comprising the steps of:
- electrically heating a body of source material by primary current to form and maintain a molten film having surfaces substantially coplanar with the desired ribbon,
- cooling one surface of the film to effect ribbon growth, wherein the combined heating and cooling steps control the temperature gradient in the film normal to the film surface,
- moving the ribbon parallel to the surface in an axial direction away from the molten film, and
- preventing dendritic structure formation by controlling the axial temperature gradient in the ribbon adjacent the molten film to a low value by electrically heating the ribbon adjacent the molten film by current insufficient to melt the ribbon and controlled independently of the primary current, whereby formation of dendritic structure is prevented in the ribbon.
Dependencies are inferred from the claim text.