C01G 27/02
Oxides
C01G27/02 (Oxides) appears on 74 US grants and 99 published applications in this corpus.
Search patents in C01G- Granted patents
- 74
- Published applications
- 99
- Assignees
- 69
- Inventors
- 268
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 3 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 1 |
| 2003 | 1 | 1 |
| 2004 | 0 | 6 |
| 2005 | 2 | 5 |
| 2006 | 3 | 8 |
| 2007 | 5 | 4 |
| 2008 | 1 | 2 |
| 2009 | 3 | 4 |
| 2010 | 2 | 8 |
| 2011 | 1 | 4 |
| 2012 | 4 | 6 |
| 2013 | 3 | 5 |
| 2014 | 1 | 0 |
| 2015 | 4 | 8 |
| 2016 | 2 | 7 |
| 2017 | 3 | 1 |
| 2018 | 4 | 2 |
| 2019 | 5 | 4 |
| 2020 | 3 | 1 |
| 2021 | 1 | 5 |
| 2022 | 2 | 3 |
| 2023 | 3 | 2 |
| 2024 | 4 | 6 |
| 2025 | 2 | 3 |
| 2026 | 2 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Metal oxide thin film precursor, method of fabricating metal oxide thin film using the same, and semiconductor device including the metal oxide thin film29 Sep 2026US 12,747,258 B2University-Industry Cooperation Group of Kyung Hee University
- Method for recovering hafnium and impurity metals from hafnium-containing waste residue14 Jul 2026US 12,680,145 B2Jiangxi Zhongha New Material Co., Ltd.
- Method for producing ferroelectric film, ferroelectric film, and usage thereof15 Jul 2025US 12,359,300 B2Tokyo Institute of Technology
- Thin film structure including dielectric material layer, method of manufacturing the same, and electronic device employing the same15 Apr 2025US 12,276,026 B2Samsung Electronics Co., Ltd.
- Thin film structure including dielectric material layer, and method of manufacturing the same, and electronic device employing the same27 Aug 2024US 12,071,690 B2Samsung Electronics Co., Ltd.
- Hafnium-acid-compound-containing material and method for producing same6 Aug 2026US 2026/0225908 A1Mitsui Kinzoku Company, Limited
- Controlling dielectric constant of fe-hfo223 Apr 2026US 2026/0109619 A1Samsung Electronics Co., Ltd.
- N- and p-type 2d channels via surface charge transfer from a doped oxide23 Apr 2026US 2026/0114020 A1Samsung Electronics Co., Ltd.
- Hafnium compound-containing sol-gel liquid and hafnia-containing film10 Apr 2025US 2025/0115488 A1Mitsubishi Materials Corporation
- Method for recovering hafnium and impurity metals from hafnium-containing waste residue13 Mar 2025US 2025/0084504 A1Shenzhen Sinohf Technology Co., Ltd.
Most cited
By later US patents
- Plasma synthesis of metal oxide nanoparticles77US 7,217,407 B2E. I. Du Pont de Nemours and Company · 2007
- Hydrous zirconium oxide, hydrous hafnium oxide and method of making same69US 7,252,767 B2Magnesium Elektron Limited · 2007
- Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide54US 6,969,539 B2President and Fellows of Harvard College · 2005
- Continuous process for production of fine particulate ceramics36US 4,845,056 AAllied-Signal Inc. · 1989
- High dielectric constant device27US 7,183,604 B2Interuniversitair Microelektronica Centrum (IMEC) vzw · 2007