Method for producing ferroelectric film, ferroelectric film, and usage thereof

Abstract

Provided is a method for forming a ferroelectric film of a metal oxide having a fluorite-type structure at a low temperature of lower than 300° C., and a ferroelectric film obtained at a low temperature. The present invention provides a production method of a ferroelectric film comprising a crystalline metal oxide having a fluorite-type structure of an orthorhombic crystal phase, which comprises using a film sputtering method comprising sputtering a target at a substrate temperature of lower than 300° C., to deposit on the substrate a film of a metal oxide which is capable of having a fluorite-type structure of an orthorhombic crystal phase, and having a subsequent thermal history of said film of lower than 300° C.; or applying an electric field to said film after said deposition or after said thermal history of lower than 300° C. Also provided are the ferroelectric film, which is formed on an organic substrate, glass, or metal substrate, which can be used only at low temperatures, and a ferroelectric element and a ferroelectric functional element or device using the ferroelectric film.

Dependencies are inferred from the claim text.