Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide
AssigneePresident and Fellows of Harvard College
InventorsRoy G. Gordon, Jill Becker, Dennis Hausmann, Seigi Suh
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AssigneePresident and Fellows of Harvard College
InventorsRoy G. Gordon, Jill Becker, Dennis Hausmann, Seigi Suh
Estimating the term…
Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris-(ter-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. supplying the vapors in alternating pulse produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
A process for forming materials comprising silicon, oxygen and one or more metals or metalloids, comprising:
A process for forming materials comprising silicon, oxygen and one or more metals or metalloids, comprising:
A process for forming materials comprising phosphorus, oxygen and one or more metals or metalloids, comprising:
A process for forming materials comprising phosphorus, oxygen and one or more metals or metalloids, comprising:
A process for forming a material comprising a metal and oxygen, comprising:
A process for forming a metal oxide, comprising:
A process for forming material comprising oxygen and one or more metals, comprising:
Dependencies are inferred from the claim text.