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US 7,183,604 B2Granted
High dielectric constant device
AssigneeInteruniversitair Microelektronica Centrum (IMEC) vzw
InventorsEduard Cartier, Jerry Chen, Chao Zhao
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Abstract
Dielectric material compositions comprising HfO2 and a second compound are disclosed. The compositions are characterized by at least a part of the compositions being in a cubic crystallographic phase. Further, semiconductor based devices comprising such dielectric material compound and method for forming such compounds are disclosed.
Claims11
A device comprising:
- a gate electrode,
- a substrate having a top surface underlying the gate electrode, and
- a dielectric layer interposed between the gate electrode and the top surface, the dielectric layer comprising a composition including HfO2 and a second compound, wherein at least a portion of the composition is in a cubic crystallographic phase.
Dependencies are inferred from the claim text.