Thin film structure including dielectric material layer, and method of manufacturing the same, and electronic device employing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsNarae Han, Jeonggyu Song, Yongsung Kim, Jooho Lee
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Abstract
A thin film structure including a dielectric material layer, a method of manufacturing the same, and an electronic device employing the same are disclosed. The disclosed thin film structure includes a first conductive layer; a first dielectric material layer on the first conductive layer, the first dielectric material layer having a crystal phase and including a metal oxide; an InxOy-based seed material layer formed on the first dielectric material layer and having a thickness less than a thickness of the first dielectric material layer; and a second conductive layer formed on the seed material layer.
Claims19
A thin film structure comprising:
- a first conductive layer;
- a first dielectric material layer on the first conductive layer, the first dielectric material layer having a tetragonal crystal phase and including a metal oxide;
- an indium oxide-based seed material layer on the first dielectric material layer, the indium oxide-based seed material layer having a thickness less than a thickness of the first dielectric material layer and configured to induce the tetragonal crystal phase of the first dielectric material layer;
- and
- a second conductive layer formed on the seed material layer, the second conductive layer including a conductive material different from the indium oxide-based seed material.
Dependencies are inferred from the claim text.