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US 12,276,026 B2Granted
Thin film structure including dielectric material layer, method of manufacturing the same, and electronic device employing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsBo-Eun Park, Jooho Lee, Yongsung Kim, Jeonggyu Song
Life of this patent
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Abstract
A thin film structure includes a first conductive layer, a dielectric material layer on the first conductive layer, and an upper layer on the dielectric material layer. The dielectric material layer including HfxA1-xO2 satisfies at least one of a first condition and a second condition. In the first condition the dielectric material layer is formed to a thickness of 5 nm or less and in the second condition the x in HfxA1-xO2 is in a range of 0.3 to 0.5.
Claims19
An electronic device comprising:
- a first conductive layer including Ti, N and Nb;
- a dielectric material layer including a metal oxide including Hf and Zr on the first conductive layer;
- and
- a second conductive layer including Ti and N on the dielectric material layer.
1 more element
An electronic device comprising:
- a first conductive layer having a multilayer structure including TiN and NbN;
- a dielectric material layer including at least one of Hf and Zr;
- and
- a second conductive layer including at least one of TiN and NbN on the dielectric material layer.
1 more element
Dependencies are inferred from the claim text.