B24B 49/02
According to the instantaneous size and required size of the workpiece acted
Official title: according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent (B24B49/12 takes precedence)
B24B49/02 (According to the instantaneous size and required size of the workpiece acted) appears on 955 US grants and 765 published applications in this corpus.
Search patents in B24B- Granted patents
- 955
- Published applications
- 765
- Assignees
- 391
- Inventors
- 1,779
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 2 | 0 |
| 1978 | 4 | 0 |
| 1979 | 4 | 0 |
| 1980 | 5 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 3 | 0 |
| 1985 | 5 | 0 |
| 1986 | 5 | 0 |
| 1987 | 10 | 0 |
| 1988 | 2 | 0 |
| 1989 | 9 | 0 |
| 1990 | 3 | 0 |
| 1991 | 4 | 0 |
| 1992 | 10 | 0 |
| 1993 | 3 | 0 |
| 1994 | 10 | 0 |
| 1995 | 5 | 0 |
| 1996 | 9 | 0 |
| 1997 | 26 | 0 |
| 1998 | 23 | 0 |
| 1999 | 30 | 0 |
| 2000 | 52 | 0 |
| 2001 | 64 | 23 |
| 2002 | 60 | 50 |
| 2003 | 70 | 50 |
| 2004 | 27 | 41 |
| 2005 | 52 | 35 |
| 2006 | 42 | 27 |
| 2007 | 29 | 24 |
| 2008 | 20 | 30 |
| 2009 | 12 | 16 |
| 2010 | 23 | 22 |
| 2011 | 16 | 17 |
| 2012 | 17 | 22 |
| 2013 | 19 | 19 |
| 2014 | 21 | 24 |
| 2015 | 19 | 27 |
| 2016 | 19 | 18 |
| 2017 | 20 | 20 |
| 2018 | 22 | 23 |
| 2019 | 18 | 28 |
| 2020 | 14 | 34 |
| 2021 | 12 | 28 |
| 2022 | 18 | 33 |
| 2023 | 30 | 41 |
| 2024 | 28 | 47 |
| 2025 | 28 | 39 |
| 2026 | 22 | 27 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Waviness prediction device, waviness prediction method, processing method for polishing target article, and program18 Aug 2026US 12,708,979 B2Resonac Corporation
- Wafer thinning method having feedback control18 Aug 2026US 12,713,859 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Surface property measuring system, surface property measuring method, polishing apparatus, and polishing method11 Aug 2026US 12,703,058 B2Ebara Corporation
- Abrasive flow machine, method for ascertaining material removal on a workpiece, and method for determining the cutting power of a grinding medium4 Aug 2026US 12,697,697 B2Extrude Hone Corporation
- Methods for compensating for crystal structure differential material removal rates in sub-aperture figuring processes28 Jul 2026US 12,691,548 B2Corning Incorporated
- Polishing method, polishing apparatus, and computer-readable storage medium8 Oct 2026US 2026/0307201 A1Ebara Corporation
- Polishing device1 Oct 2026US 2026/0295765 A1Ebara Corporation
- Method for Ascertaining Material Removal on a Workpiece, and Method for Determining the Cutting Power of a Grinding Medium17 Sep 2026US 2026/0273686 A1Extrude Hone Corporation
- Position setting method of thickness measurer, and grinding apparatus17 Sep 2026US 2026/0273688 A1Tokyo Electron Limited
- Semiconductor wafer grinding device and grinding method10 Sep 2026US 2026/0264189 A1Tokyo Seimitsu Co., Ltd.
Most cited
By later US patents
- Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus396US 5,893,796 AAPPLIED Materials.Inc. · 1999
- System for real-time control of semiconductor wafer polishing including optical monitoring282US 5,658,183 AMicron Technology, Inc. · 1997
- In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection269US 4,793,895 AIBM Corporation · 1988
- Apparatus and method for in-situ monitoring of chemical mechanical polishing operations261US 5,964,643 AAPPLIED Materials.Inc. · 1999
- System for real-time control of semiconductor wafer polishing including optical montoring249US 5,730,642 AMicron Technology, Inc. · 1998