Semiconductor wafer grinding device and grinding method

A semiconductor wafer grinding method for grinding an outer circumferential portion of a semiconductor wafer placed on a turntable, the semiconductor wafer grinding method comprising:

• a step of measuring a crystal orientation of an outer circumferential portion of at least one semiconductor wafer from among a plurality of semiconductor wafers cut from an ingot and storing the crystal orientation as crystal orientation data corresponding to circumferential displacement with respect to a reference position of the at least one semiconductor wafer;
• a step of grinding the at least one semiconductor wafer with the crystal orientation measured while changing a grinding condition including a direction and a frequency of ultrasonic application, based on the crystal orientation, and storing an effective grinding condition as learning data;
• a step of detecting a reference position of another semiconductor wafer cut from the ingot and estimating a crystal orientation at a grinding position of the other semiconductor wafer, with reference to the crystal orientation data, based on the detected reference position;
• and
• a step of setting a grinding condition at the grinding position of the other semiconductor wafer, with reference to the learning data, and grinding an outer circumferential portion of the other semiconductor wafer under the grinding condition set to a grinding spindle.

A semiconductor wafer grinding method for grinding an outer circumferential portion of a semiconductor wafer placed on a turntable, the semiconductor wafer grinding method comprising:

• a step of measuring a crystal orientation of an outer circumferential portion of one semiconductor wafer from among a plurality of semiconductor wafers and storing the crystal orientation as crystal orientation data corresponding to circumferential displacement with reference to a reference position of the one semiconductor wafer;
• a step of detecting a reference position of another semiconductor wafer and estimating a crystal orientation at a grinding position of the other semiconductor wafer, with reference to the crystal orientation data, based on the detected reference position;
• a step of setting, with reference to a relationship between a crystal orientation and a grinding condition stored in advance as learning data, a grinding condition at the grinding position of the one semiconductor wafer;
• and
• a step of grinding an outer circumferential portion of the other semiconductor wafer with a grinding stone under the set grinding condition, wherein
• the set grinding condition includes at least either a direction or a frequency of ultrasonic application to the grinding stone and further includes a grinding rate and an incision amount of the grinding stone.

A semiconductor wafer grinding device capable of grinding an outer circumferential portion of a wafer, the semiconductor wafer grinding device comprising:

• a grinding stone for grinding the outer circumferential portion of the wafer;
• and
• an ultrasonic application means that performs ultrasonic application to the grinding stone, wherein
• the grinding stone includes:
• a first grindstone disposed in a first direction in a thickness direction of the wafer;
• and a second grindstone disposed in a second direction opposite to the first direction in the thickness direction.