Y10S 438/972
Stored charge erasure
Y10S438/972 (Stored charge erasure) appears on 38 US grants and 5 published applications in this corpus.
Search patents in Y10S- Granted patents
- 38
- Published applications
- 5
- Assignees
- 17
- Inventors
- 55
- Latest grant
- 6 Jan 2015
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 3 | 0 |
| 1994 | 0 | 0 |
| 1995 | 6 | 0 |
| 1996 | 4 | 0 |
| 1997 | 5 | 0 |
| 1998 | 2 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 3 | 1 |
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 1 | 0 |
| 2005 | 0 | 1 |
| 2006 | 0 | 1 |
| 2007 | 1 | 0 |
| 2008 | 1 | 1 |
| 2009 | 1 | 1 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Resistance type memory device6 Jan 2015US 8,927,956 B2Macronix International Co., Ltd.
- Resistance type memory device and fabricating method and operating method thereof28 Apr 2009US 7,524,722 B2Macronix International Co., Ltd.
- Permeable capacitor electrode12 Feb 2008US 7,329,917 B2Micron Technology, Inc.
- Permeable capacitor electrode20 Feb 2007US 7,179,706 B2Micron Technology, Inc.
- Permeable capacitor electrode31 Aug 2004US 6,784,069 B1Micron Technology, Inc.
- Resistance type memory device2 Jul 2009US 2009/0166604 A1Macronix International Co., Ltd.
- Resistance type memory device and fabricating method and operating method thereof17 Apr 2008US 2008/0089111 A1Macronix International Co., Ltd.
- Permeable capacitor electrode31 Aug 2006US 2006/0192239 A1Micron Technology, Inc.
- Permeable capacitor electrode3 Mar 2005US 2005/0048734 A1Micron Technology, Inc.
- Semiconductor device architectures including UV transmissive nitride layers29 Nov 2001US 2001/0046731 A1Texas Instruments Incorporated
Most cited
By later US patents
- Highly compact EPROM and flash EEPROM devices154US 5,268,318 A1993
- Tapering sidewalls of via holes122US 5,269,880 ANorthern Telecom Limited · 1993
- High density EEPROM cell array with novel programming scheme and method of manufacture111US 5,379,253 ANational Semiconductor Corporation · 1995
- Segment-erasable flash EPROM97US 5,397,726 ANational Semiconductor Corporation · 1995
- Flash EEPROM memory with improved discharge speed using substrate bias and method therefor79US 5,617,357 AAdvanced Micro Devices, Inc. · 1997