Resistance type memory device
AssigneeMacronix International Co., Ltd.
InventorsMing-Daou Lee, Chia-Hua Ho, Erh-Kun Lai, Kuang-Yeu Hsieh
Life of this patent
Estimating the term…
Abstract
A resistance type memory device is provided. The resistance type memory device includes a first and a second conductors and a metal oxide layer. The metal oxide layer is disposed between the first and the second conductors, and the resistance type memory device is defined in a first resistivity. The resistance type memory device is defined in a second resistivity after a first pulse voltage is applied to the metal oxide layer. The resistance type memory device is defined in a third resistivity after a second pulse voltage is applied to the metal oxide layer. The second resistivity is greater than the first resistivity, and the first resistivity is greater than the third resistivity.
Claims9
A resistance type memory device, comprising:
- a first and a second conductors, and
- a metal oxide layer disposed between the first and the second conductors, wherein
- the resistance type memory device is defined in a first resistivity,
- the resistance type memory device is defined in a second resistivity after a first pulse voltage is applied to the metal oxide layer,
- the resistance type memory device is defined in a third resistivity after a second pulse voltage is applied to the metal oxide layer,
- the second resistivity is greater than the first resistivity, and
- the first resistivity is greater than the third resistivity.
A resistance type memory device, comprising:
- a bottom electrode;
- a resistance memory element disposed over the bottom electrode;
- and
- a top electrode disposed over the resistance memory element, wherein
- the resistance type memory device is in a first storage state as a first pulse voltage is applied to the resistance memory element,
- the resistance type memory device is in a second storage state as the first and a second pulse voltages are applied to the resistance memory element,
- the resistance type memory device is in a third storage state as the first, the second and a third pulse voltages are applied to the resistance memory element, and
- a polarity of the first pulse voltage is different from a polarity of the second and the third pulse voltages.
A resistance type memory device, comprising:
- a first and a second electrodes;
- and
- a variable resistance material layer coupled with the first and the second electrodes, wherein
- a first storage state is defined by applying a first pulse voltage to the variable resistance material layer,
- a second storage state is defined by applying the first and a second pulse voltages to the variable resistance material layer,
- a third storage state is defined by applying the first and a third pulse voltages to the variable resistance material layer, and
- the third pulse voltage is greater than the second pulse voltage.
Dependencies are inferred from the claim text.