Y10S 438/971
Stoichiometric control of host substrate composition
Y10S438/971 (Stoichiometric control of host substrate composition) appears on 50 US grants and 2 published applications in this corpus.
Search patents in Y10S- Granted patents
- 50
- Published applications
- 2
- Assignees
- 29
- Inventors
- 93
- Latest grant
- 1 Feb 2005
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 4 | 0 |
| 1978 | 5 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 2 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 2 | 0 |
| 1992 | 3 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 5 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 1 |
| 2003 | 1 | 0 |
| 2004 | 0 | 1 |
| 2005 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
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- Method for in situ growth of p-type doped group II-VI semiconductor films28 Mar 2000US 6,043,141 AHughes Electronics Corporation
- Method for the heat treatment of II-VI semiconductors3 Aug 1999US 5,933,751 ASumitomo Electric Industries, Ltd.
Most cited
By later US patents
- Method for producing compound thin films1,267US 4,058,430 A1977
- Method of producing titanium nitride MOS device gate electrode640US 4,570,328 AMotorola, Inc. · 1986
- Method of forming silicon containing thin films by atomic layer deposition utilizing Si2C16 and NH3604US 6,528,430 B2Samsung Electronics Co., Ltd. · 2003
- Rapid process for producing a chalcopyrite semiconductor on a substrate156US 5,578,503 ASiemens Aktiengesellschaft · 1996
- Manufacturing method of silicide gates and interconnects for integrated circuits64US 4,443,930 ANCR Corporation · 1984