Method for the heat treatment of II-VI semiconductors
AssigneeSumitomo Electric Industries, Ltd.
InventorRyu Hirota
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Abstract
An object of the invention is to provide a method for the heat treatment of II-VI semiconductors such as ZnS, ZnS.sub.x Se.sub.1-x, Zn.sub.y Cd.sub.1-y Se, etc. to dope with Group III elements as a donor impurity to reduce its resistivity. This object can be attained by a method for the heat treatment of II-VI semiconductors in a closed vessel, which comprises forming a film of a Group III element as a donor impurity or a Group III element-containing compound on a surface of single crystal of II-VI semiconductors, then charging the single crystal and a Group II element for constituting the single crystal in the closed vessel and heating them in such a manner that the both are not contacted with each other.
Claims14
A method for the heat treatment of II-VI semiconductors in a closed vessel, which comprises forming a film of a Group III element as a donor impurity or a Group III element-containing compound on a surface of single crystal of II-VI semiconductors, then charging the single crystal and a Group II element for constituting the single crystal in the closed vessel and heating them in such a manner that the both are not contacted with each other.
A method for the heat treatment of ZnSe single crystal to dope it with a Group III element to decrease the resistivity in a closed vessel, which comprises forming a film of a Group III element as a donor impurity or a Group III element-containing compound on a surface of ZnSe single crystal, then charging the single crystal and Zn in the closed vessel and heating them in such a manner that the both are not contacted with each other.
Dependencies are inferred from the claim text.